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公开(公告)号：US08450193B2
公开(公告)日：2013-05-28
申请号：US11770220
申请日：2007-06-28
IPC分类号： H01L21/04
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.
摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹紧机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。
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公开(公告)号：US07655933B2
公开(公告)日：2010-02-02
申请号：US11778335
申请日：2007-07-16
IPC分类号： H01J37/317
CPC分类号： H01J37/20 , H01J2237/2001 , H01J2237/2065 , H01J2237/31701 , H01J2237/336 , H01L21/67109 , H01L21/67213
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.
摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。
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公开(公告)号：US07528392B2
公开(公告)日：2009-05-05
申请号：US11733445
申请日：2007-04-10
IPC分类号： H01J37/317 , H01J37/20 , H01L21/425
CPC分类号： H01J37/3171 , H01J2237/2001 , H01L21/67005
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.
摘要翻译： 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于低温离子注入的装置。 该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并且促进晶片在至少一个维度上的移动。 该装置还可以包括联接到晶片支撑机构的冷却机构。 冷却机构可以包括制冷单元，刚性管的闭环，以将来自制冷单元的至少一个冷却剂循环到晶片支撑机构，以及一个或多个旋转轴承，以连接刚性管以适应晶片的移动 至少一个维度。
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公开(公告)号：US07476878B2
公开(公告)日：2009-01-13
申请号：US11567522
申请日：2006-12-06
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/09 , H01J37/15 , H01J37/18 , H01J37/302 , H01J37/3023 , H01J2237/0455 , H01J2237/0458 , H01J2237/1503 , H01J2237/182 , H01J2237/188 , H01J2237/30488 , H01J2237/31705 , H01L21/266
摘要： Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.
摘要翻译： 公开了减少光阻剂除气效果的技术。 在一个特定的示例性实施例中，技术可以被实现为用于减少离子注入机中的光致抗蚀剂除气的影响的装置。 该装置可以包括位于终端站和上游束线组件之间的漂移管。 该装置还可以包括漂移管和终端站之间的第一可变孔径。 该装置还可以包括漂移管和上游束线部件之间的第二可变孔径。 可以调节第一可变孔径和第二可变孔径以促进差动泵送。
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公开(公告)号：US20080121821A1
公开(公告)日：2008-05-29
申请号：US11696506
申请日：2007-04-04
CPC分类号： F28D20/02 , C23C14/48 , C23C14/50 , C23C14/541 , F28F3/12 , H01J37/20 , H01J37/3171 , H01J2237/2001 , H01L21/67103 , H01L21/67109 , H01L21/67213 , H01L21/67248 , Y02E60/145
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as a wafer support assembly for low-temperature ion implantation. The wafer support assembly may comprise a base. The wafer support assembly may also comprise a platen configured to mount to the base via one or more low-thermal-contact members, wherein the platen has a heat capacity larger than that of a wafer mounted thereon, such that, if pre-chilled to a predetermined temperature, the platen causes the wafer to stay within a range of the predetermined temperature during ion implantation.
摘要翻译： 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于低温离子注入的晶片支撑组件。 晶片支撑组件可以包括基座。 晶片支撑组件还可以包括压板，其被配置成经由一个或多个低热接触构件安装到基座，其中压板的热容量大于安装在其上的晶片的热容量，使得如果预冷却至 在预定温度下，压板使得晶片在离子注入期间保持在预定温度的范围内。
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公开(公告)号：US5932882A
公开(公告)日：1999-08-03
申请号：US860749
申请日：1997-09-08
IPC分类号： H01J37/05 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/04756
摘要： A decel lens assembly (9) located between the mass selection flight tube and the substrate holder comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential and a field electrode (61) between the two at a negative potential to provide focusing. The axial spacing in the beam direction between the first and second electrodes is less than the smallest transverse dimension of the field electrode. The decel lens assembly (9) is mounted directly opposite the outlet from the process chamber to the vacuum pump to maximize evacuation efficiency. An additional screening electrode (56) is provided between the second electrode of the decel lens assembly and the exit aperture of the mass selector. A perforated screening cylinder (54) is mounted on the light tube with the second electrode of the lens assembly mounted at the down beam end of the cylinder. A first electrode has a cylindrical screening flange extending around the field electrode. A further screening electrode is located at the entrance to the electron confinement tube of the PFS system.
摘要翻译： PCT No.PCT / GB96 / 02741 Sec。 371日期：1997年9月8日 102（e）1997年9月8日PCT PCT 1996年11月8日PCT公布。 公开号WO97 / 17717PC。 日期1997年5月15日位于质量选择飞行管和衬底保持器之间的减速器组件（9）包括在衬底电位处的第一电极（65），在飞行管电位处的第二电极（60）和场电极 61）两者之间处于负电位以提供聚焦。 第一和第二电极之间的光束方向上的轴向间距小于场电极的最小横向尺寸。 减速透镜组件（9）直接安装在从处理室的出口的正对面到真空泵的对面，以最大化排出效率。 在减速透镜组件的第二电极和质量选择器的出口之间设置另外的屏蔽电极（56）。 穿孔筛筒（54）安装在光管上，透镜组件的第二电极安装在气缸的下梁端。 第一电极具有围绕场电极延伸的圆柱形屏蔽凸缘。 另一个屏蔽电极位于PFS系统的电子限制管的入口处。
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7.发明授权Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process 失效离子注入装置和在离子注入工艺中监测高能量中性污染的方法
公开(公告)号：US5883391A
公开(公告)日：1999-03-16
申请号：US876434
申请日：1997-06-16
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J2237/0225 , H01J2237/304
摘要： High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.
摘要翻译： 离子注入机中的高能量中性污染可以由束离子中和，因为它们在被再次减速到期望的注入能量之前被暂时加速在电极处。 这种情况发生在例如减速透镜装置中，其包括在相对高的负电位处提供所需聚焦的电极。 通过测量该负电场电极上的电流消耗来监测该污染程度。
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公开(公告)号：US07622722B2
公开(公告)日：2009-11-24
申请号：US11866099
申请日：2007-10-02
CPC分类号： H01J27/022 , H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/006 , H01J2237/182
摘要： An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
摘要翻译： 公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。 在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。 离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多个物质。 还可以包括泵送部分以从离子束源壳体排出气体。 可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。
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公开(公告)号：US20080108208A1
公开(公告)日：2008-05-08
申请号：US11733467
申请日：2007-04-10
IPC分类号： H01L21/425
CPC分类号： H01L21/26506 , H01J2237/2001 , H01J2237/31701 , H01L21/26513 , H01L21/2658 , H01L21/26593
摘要： Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge2H6), germanium nitride (Ge3N4), germanium-fluorine compounds (GFn, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.
摘要翻译： 公开了形成浅结的技术。 在一个特定的示例性实施例中，可以将技术实现为用于形成浅结的方法。 该方法可以包括产生基于选自以下的一种或多种材料的分子离子的离子束：二氧化锗（Ge 2 H 6 H 6），氮化锗（Ge 3-N 3），锗 - 氟化合物（GF n n，其中n = 1,2或3）和其它含锗的 化合物。 该方法还可以包括使离子束撞击半导体晶片。
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公开(公告)号：US6060715A
公开(公告)日：2000-05-09
申请号：US962257
申请日：1997-10-31
IPC分类号： H01J37/08 , H01J37/147 , H01J37/317
CPC分类号： H01J37/1477 , H01J37/08 , H01J37/3171
摘要： An ion implanter for implanting ions in a target substrate is arranged to scan the ion beam at the point of extraction of the beam from the ion source. The ion beam extraction assembly includes a tectrode construction in which an extraction electrode adjacent the ion source aperture is split into two halves. A differential voltage is applied across the two halves of the extraction electrode to deflect the ion beam being extracted from the ion source electrostatically. The plane of deflection is arranged to coincide with the plane if dispersion of the ions in a mass analyser magnet downstream of the extraction point and the deflected beam of ions of desired mass/charge ratio is still brought to focus at a common mass selection slit at the exit of the analyser magnet.
摘要翻译： 用于在目标衬底中注入离子的离子注入机布置成在离子源的束提取点扫描离子束。 离子束提取组件包括一个构造构造，其中邻近离子源孔的提取电极被分成两半。 在提取电极的两个半部分上施加一个差分电压，以使从静电离子源提取的离子束偏转。 如果在提取点下游的质量分析器磁体中离子的离散和所需质量/电荷比的偏转的离子束的离子仍然在共同质量选择狭缝处聚焦，则偏转平面被布置成与平面一致 分析仪磁铁的出口。
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