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公开(公告)号：US20080042078A1
公开(公告)日：2008-02-21
申请号：US11778335
申请日：2007-07-16
IPC分类号： H01J37/08
CPC分类号： H01J37/20 , H01J2237/2001 , H01J2237/2065 , H01J2237/31701 , H01J2237/336 , H01L21/67109 , H01L21/67213
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.
摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。
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公开(公告)号：US07655933B2
公开(公告)日：2010-02-02
申请号：US11778335
申请日：2007-07-16
IPC分类号： H01J37/317
CPC分类号： H01J37/20 , H01J2237/2001 , H01J2237/2065 , H01J2237/31701 , H01J2237/336 , H01L21/67109 , H01L21/67213
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.
摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。
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公开(公告)号：US20080124903A1
公开(公告)日：2008-05-29
申请号：US11733445
申请日：2007-04-10
IPC分类号： H01L21/425 , C23C14/00
CPC分类号： H01J37/3171 , H01J2237/2001 , H01L21/67005
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.
摘要翻译： 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于低温离子注入的装置。 该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并且促进晶片在至少一个维度上的移动。 该装置还可以包括联接到晶片支撑机构的冷却机构。 冷却机构可以包括制冷单元，刚性管的闭环，以将来自制冷单元的至少一个冷却剂循环到晶片支撑机构，以及一个或多个旋转轴承，以连接刚性管以适应晶片的移动 至少一个维度。
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公开(公告)号：US20080044257A1
公开(公告)日：2008-02-21
申请号：US11770220
申请日：2007-06-28
IPC分类号： H01L21/677
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.
摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。
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公开(公告)号：US08450193B2
公开(公告)日：2013-05-28
申请号：US11770220
申请日：2007-06-28
IPC分类号： H01L21/04
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.
摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹紧机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触， 以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。 该装置还可以包括后冷却站，以在离子注入之后冷却晶片。 该设备还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。
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公开(公告)号：US07528392B2
公开(公告)日：2009-05-05
申请号：US11733445
申请日：2007-04-10
IPC分类号： H01J37/317 , H01J37/20 , H01L21/425
CPC分类号： H01J37/3171 , H01J2237/2001 , H01L21/67005
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.
摘要翻译： 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于低温离子注入的装置。 该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并且促进晶片在至少一个维度上的移动。 该装置还可以包括联接到晶片支撑机构的冷却机构。 冷却机构可以包括制冷单元，刚性管的闭环，以将来自制冷单元的至少一个冷却剂循环到晶片支撑机构，以及一个或多个旋转轴承，以连接刚性管以适应晶片的移动 至少一个维度。
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公开(公告)号：US20080121821A1
公开(公告)日：2008-05-29
申请号：US11696506
申请日：2007-04-04
CPC分类号： F28D20/02 , C23C14/48 , C23C14/50 , C23C14/541 , F28F3/12 , H01J37/20 , H01J37/3171 , H01J2237/2001 , H01L21/67103 , H01L21/67109 , H01L21/67213 , H01L21/67248 , Y02E60/145
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as a wafer support assembly for low-temperature ion implantation. The wafer support assembly may comprise a base. The wafer support assembly may also comprise a platen configured to mount to the base via one or more low-thermal-contact members, wherein the platen has a heat capacity larger than that of a wafer mounted thereon, such that, if pre-chilled to a predetermined temperature, the platen causes the wafer to stay within a range of the predetermined temperature during ion implantation.
摘要翻译： 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于低温离子注入的晶片支撑组件。 晶片支撑组件可以包括基座。 晶片支撑组件还可以包括压板，其被配置成经由一个或多个低热接触构件安装到基座，其中压板的热容量大于安装在其上的晶片的热容量，使得如果预冷却至 在预定温度下，压板使得晶片在离子注入期间保持在预定温度的范围内。
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公开(公告)号：US4070015A
公开(公告)日：1978-01-24
申请号：US735233
申请日：1976-10-26
申请人： Richard Stephen Muka
发明人： Richard Stephen Muka
IPC分类号： B65H3/10
CPC分类号： B65H3/10 , B65H2301/42322
摘要： Sheet feeding apparatus including a direct acting vacuum control value for an oscillating vacuum feeder. The control valve includes a valve shoe normally biased to a position to cover a vent port in the housing of the oscillating vacuum feeder. An appropriate linkage, interconnected to the shoe, is actuated to uncover the vent port for at least a portion of the oscillation cycle of the oscillating vacuum feeder, whereby the vacuum within the oscillating vacuum feeder is vented to release pneumatic forces on the sheets during at least the return portion of the oscillation cycle.
摘要翻译： 包括用于振荡式真空给料器的直接作用真空控制值的送纸装置。 控制阀包括通常偏置到覆盖振荡式真空给料器的壳体中的排气口的位置的阀座。 与鞋相互连接的合适的连接件被致动以在摆动式真空给料器的振荡周期的至少一部分上露出通气口，由此在摆动式真空给料器内的真空被排出以在过程中释放片材上的气压力 最小的振荡周期的返回部分。
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