发明申请
- 专利标题: Semiconductor Device
- 专利标题(中): 半导体器件
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申请号: US11632049申请日: 2005-11-09
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公开(公告)号: US20080042180A1公开(公告)日: 2008-02-21
- 发明人: Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
- 申请人: Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
- 申请人地址: JP KANAGAWA
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP KANAGAWA
- 优先权: JP2004-32895 20041111; JP2004-328298 20041111
- 国际申请: PCT/JP05/20983 WO 20051109
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
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