发明申请
- 专利标题： Overall defect reduction for PECVD films
- 专利标题（中）： PECVD膜的总体缺陷减少
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申请号： US11508545申请日： 2006-08-23
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公开(公告)号： US20080050932A1公开(公告)日： 2008-02-28
- 发明人: Annamalai Lakshmanan , Vu NT Nguyen , Sohyun Park , Ganesh Balasubramanian , Steven Reiter , Tsutomu Kiyohara , Francimar Schmitt , Bok Hoen Kim
- 申请人： Annamalai Lakshmanan , Vu NT Nguyen , Sohyun Park , Ganesh Balasubramanian , Steven Reiter , Tsutomu Kiyohara , Francimar Schmitt , Bok Hoen Kim
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： H01L21/473
- IPC分类号： H01L21/473
摘要：
The present invention generally provides an apparatus and method for reducing defects on films deposited on semiconductor substrates. One embodiment of the present invention provides a method for depositing a film on a substrate. The method comprises treating the substrate with a first plasma configured to reduce pre-existing defects on the substrate, and depositing a film comprising silicon and carbon on the substrate by applying a second plasma generated from at least one precursor and at least one reactant gas.
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