发明申请
- 专利标题: PLASMA PROCESSING APPARATUS AND METHOD
- 专利标题(中): 等离子体加工设备和方法
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申请号: US11843372申请日: 2007-08-22
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公开(公告)号: US20080053816A1公开(公告)日: 2008-03-06
- 发明人: Nobumasa Suzuki , Hideo Kitagawa
- 申请人: Nobumasa Suzuki , Hideo Kitagawa
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-237805(PAT.) 20060901
- 主分类号: H05F3/00
- IPC分类号: H05F3/00 ; C23C16/00
摘要:
A plasma processing apparatus includes a plasma processing chamber and a source of microwaves. The microwaves are introduced to the processing chamber by a slotted annular waveguide having inner and outer arc-shaped slots. The distance between the centerline of the inner and outer arc-shaped slots is set to be an even multiple of a half wavelength of a microwave surface wave propagating along a surface of a dielectric window of the chamber. A distance between the centerline of the outer arc-shaped slot and an outer periphery of the dielectric window is set to be an odd multiple of the half wavelength of the microwave surface wave.
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