发明申请
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11892634申请日： 2007-08-24
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公开(公告)号： US20080064212A1公开(公告)日： 2008-03-13
- 发明人: Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
- 申请人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
- 优先权： JP2006-228704 20060825; JP2007-201855 20070802
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/31
摘要：
A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.
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