公开(公告)号：US20100240219A1

公开(公告)日：2010-09-23

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

公开(公告)号：US07776756B1

公开(公告)日：2010-08-17

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20050230045A1

公开(公告)日：2005-10-20

申请号：US10922905

申请日：2004-08-23

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： C23F1/08 ,  B44C1/22 ,  C23F1/00 ,  C23F1/16 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US07985683B2

公开(公告)日：2011-07-26

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/312

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20100075504A1

公开(公告)日：2010-03-25

申请号：US12574543

申请日：2009-10-06

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

摘要翻译： 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US07097784B2

公开(公告)日：2006-08-29

申请号：US10742992

申请日：2003-12-23

申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

摘要翻译： 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

公开(公告)号：US20130008868A1

公开(公告)日：2013-01-10

申请号：US13541167

申请日：2012-07-03

申请人： Yoshihiro UOZUMI ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroyasu Iimori ,  Tatsuhiko Koide ,  Hideaki Hirabayashi ,  Yuji Nagashima

发明人： Yoshihiro UOZUMI ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroyasu Iimori ,  Tatsuhiko Koide ,  Hideaki Hirabayashi ,  Yuji Nagashima

IPC分类号： B08B3/00 ,  B05C11/00 ,  B08B7/00 ,  B44C1/22

CPC分类号： H01L21/67075 ,  G03F7/162 ,  G03F7/405 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/6715 ,  H01L21/67739 ,  H01L21/68

摘要： According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

摘要翻译： 根据一个实施例，公开了一种基板处理方法。 该方法可以包括用第一液体处理底物。 衬底具有形成在衬底的主表面上的结构体。 该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件，并且通过执行至少一个将第二液体的至少一部分变为固体， 第二液体反应，减少包含在第二液体中的溶剂的量，并使溶解在第二液体中的物质的至少一部分被分离。 该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。

公开(公告)号：US20100210110A1

公开(公告)日：2010-08-19

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/311

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

公开(公告)号：US20090311874A1

公开(公告)日：2009-12-17

申请号：US12257493

申请日：2008-10-24

申请人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

发明人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

IPC分类号： H01L21/31

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.

摘要翻译： 处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板，通过使用纯水去除化学溶液，在半导体基板的表面上形成防水保护膜，冲洗 通过使用纯水对半导体衬底进行干燥，并干燥半导体衬底。

公开(公告)号：US20090250431A1

公开(公告)日：2009-10-08

申请号：US12404681

申请日：2009-03-16

申请人： Minako INUKAI ,  Yoshihiro OGAWA ,  Hiroshi TOMITA ,  Hiroyasu IIMORI ,  Yuji YAMADA ,  Yoshihiro UOZUMI ,  Linan JI ,  Kaori UMEZAWA ,  Hisadhi OKUCHI

发明人： Minako INUKAI ,  Yoshihiro OGAWA ,  Hiroshi TOMITA ,  Hiroyasu IIMORI ,  Yuji YAMADA ,  Yoshihiro UOZUMI ,  Linan JI ,  Kaori UMEZAWA ,  Hisadhi OKUCHI

IPC分类号： C23F1/00 ,  B08B3/08 ,  C23F1/08 ,  B08B13/00

CPC分类号： H01L21/02082 ,  H01L21/02057

摘要： A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid.

摘要翻译： 在其上形成有彼此相邻的多个图案的基板的处理的基板处理方法具有：将第一处理液体供给到干燥后的基板的主面，并且形成有图案的第一处理液 粘附在基材的主表面上; 以及在所述第一处理液体粘附到所述基板的主表面的状态下，将具有比所述第一处理液体更高的表面张力的第二处理液供给到所述基板的主表面，以处理所述基板的所述主表面， 处理液体。