发明申请
- 专利标题: POST ETCH RESIDUE REMOVAL FROM SUBSTRATES
- 专利标题(中): 从基材中去除填充残留物
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申请号: US11869096申请日: 2007-10-09
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公开(公告)号: US20080083427A1公开(公告)日: 2008-04-10
- 发明人: Joy Block , Dana Scranton , Craig Meuchel
- 申请人: Joy Block , Dana Scranton , Craig Meuchel
- 申请人地址: US MT Kalispell
- 专利权人: Semitool, Inc.
- 当前专利权人: Semitool, Inc.
- 当前专利权人地址: US MT Kalispell
- 主分类号: C23G1/02
- IPC分类号: C23G1/02 ; B08B3/08
摘要:
A method for removing residue from a workpiece includes preparing a liquid including de-ionized water, sulfuric acid, and optionally hydrofluoric acid. Carbon dioxide gas is provided into the liquid. The liquid is maintained at a desired temperature. The liquid is applied onto a workpiece in a process chamber. The liquid may be formed into a liquid layer on the workpiece having a controlled thickness. Ozone gas may be introduced into the chamber and chemically reacts with residue on the workpiece. In a second separate method the liquid includes de-ionized water, highly dilute hydrofluoric acid and carbon dioxide, with no need for ozone gas.
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