POST ETCH RESIDUE REMOVAL FROM SUBSTRATES
    1.
    发明申请
    POST ETCH RESIDUE REMOVAL FROM SUBSTRATES 审中-公开
    从基材中去除填充残留物

    公开(公告)号:US20080083427A1

    公开(公告)日:2008-04-10

    申请号:US11869096

    申请日:2007-10-09

    IPC分类号: C23G1/02 B08B3/08

    摘要: A method for removing residue from a workpiece includes preparing a liquid including de-ionized water, sulfuric acid, and optionally hydrofluoric acid. Carbon dioxide gas is provided into the liquid. The liquid is maintained at a desired temperature. The liquid is applied onto a workpiece in a process chamber. The liquid may be formed into a liquid layer on the workpiece having a controlled thickness. Ozone gas may be introduced into the chamber and chemically reacts with residue on the workpiece. In a second separate method the liquid includes de-ionized water, highly dilute hydrofluoric acid and carbon dioxide, with no need for ozone gas.

    摘要翻译: 从工件中除去残渣的方法包括制备包括去离子水,硫酸和任选的氢氟酸的液体。 二氧化碳气体被提供到液体中。 将液体保持在所需温度。 将液体施加到处理室中的工件上。 液体可以形成具有受控厚度的工件上的液体层。 臭氧气体可能被引入室内并与工件上的残留物发生化学反应。 在第二种单独的方法中,液体包括去离子水,高度稀释的氢氟酸和二氧化碳,不需要臭氧气体。

    Centrifugal spray processor and retrofit kit
    2.
    发明授权
    Centrifugal spray processor and retrofit kit 失效
    离心喷雾处理器和改装套件

    公开(公告)号:US07305999B2

    公开(公告)日:2007-12-11

    申请号:US10199998

    申请日:2002-07-19

    IPC分类号: B08B3/02

    摘要: A centrifugal spray processor for processing semiconductor wafers uses larger numbers of spray nozzles. Each spray nozzle delivers a reduced volume of liquid, to reduce consumption of liquid process chemicals. The nozzles operate at a higher back pressure. The increased number of nozzles, offset nozzle patterns and groupings of nozzles, lower nozzle flow rates, and higher nozzle back pressures, provide improved processing results. The improved spray system may be provided as a retrofit kit.

    摘要翻译: 用于处理半导体晶片的离心喷雾处理器使用更大数量的喷嘴。 每个喷嘴可以减少液体的体积,以减少液态工艺化学品的消耗。 喷嘴在较高的背压下工作。 喷嘴数量的增加,喷嘴图案的偏移以及喷嘴的分组,喷嘴流速的降低以及喷嘴背压的提高提供了改进的处理结果。 改进的喷雾系统可以作为改装套件提供。

    METHODS AND APPARATUS FOR CLEANING EDGES OF A SUBSTRATE
    3.
    发明申请
    METHODS AND APPARATUS FOR CLEANING EDGES OF A SUBSTRATE 审中-公开
    用于清洁基板边缘的方法和装置

    公开(公告)号:US20070193607A1

    公开(公告)日:2007-08-23

    申请号:US11739201

    申请日:2007-04-24

    IPC分类号: C23G1/00 B08B3/00 B08B7/00

    摘要: In methods and apparatus for cleaning a wafer, a cleaning liquid is sprayed or jetted in a direction generally tangent to the circular edge of a spinning wafer. This enhances removal of contaminants from areas near the edge. Re-deposition of contaminant pieces or particles back onto the wafer is reduced because the direction of the spray carries the contaminant off of the wafer. Insoluble contaminant films, such as post etch residue, may be removed via one or more of the pressure of the cleaning liquid, the effects of higher process temperatures from heating the cleaning liquid, and by the chemical composition of the cleaning liquid.

    摘要翻译: 在清洗晶片的方法和装置中,清洗液体在与旋转晶片的圆形边缘大致相切的方向上喷射或喷射。 这增强了从边缘附近的区域去除污染物。 由于喷射方向将污染物从晶片上脱落,所以将污染物片或颗粒重新沉积回到晶片上被减少。 可以通过清洗液体的一个或多个压力,加热清洗液体中较高工艺温度的影响以及清洗液体的化学成分来除去不溶性污染物膜,例如后蚀刻残留物。