POST ETCH RESIDUE REMOVAL FROM SUBSTRATES
    1.
    发明申请
    POST ETCH RESIDUE REMOVAL FROM SUBSTRATES 审中-公开
    从基材中去除填充残留物

    公开(公告)号:US20080083427A1

    公开(公告)日:2008-04-10

    申请号:US11869096

    申请日:2007-10-09

    IPC分类号: C23G1/02 B08B3/08

    摘要: A method for removing residue from a workpiece includes preparing a liquid including de-ionized water, sulfuric acid, and optionally hydrofluoric acid. Carbon dioxide gas is provided into the liquid. The liquid is maintained at a desired temperature. The liquid is applied onto a workpiece in a process chamber. The liquid may be formed into a liquid layer on the workpiece having a controlled thickness. Ozone gas may be introduced into the chamber and chemically reacts with residue on the workpiece. In a second separate method the liquid includes de-ionized water, highly dilute hydrofluoric acid and carbon dioxide, with no need for ozone gas.

    摘要翻译: 从工件中除去残渣的方法包括制备包括去离子水,硫酸和任选的氢氟酸的液体。 二氧化碳气体被提供到液体中。 将液体保持在所需温度。 将液体施加到处理室中的工件上。 液体可以形成具有受控厚度的工件上的液体层。 臭氧气体可能被引入室内并与工件上的残留物发生化学反应。 在第二种单独的方法中,液体包括去离子水,高度稀释的氢氟酸和二氧化碳,不需要臭氧气体。