Invention Application
- Patent Title: Method for modulating stresses of a contact etch stop layer
- Patent Title (中): 用于调节接触蚀刻停止层的应力的方法
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Application No.: US11523674Application Date: 2006-09-19
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Publication No.: US20080085607A1Publication Date: 2008-04-10
- Inventor: Chen-Hua Yu , Hung Chun Tsai , Hui-Lin Chang , Ting-Yu Shen , Yung-Cheng Lu
- Applicant: Chen-Hua Yu , Hung Chun Tsai , Hui-Lin Chang , Ting-Yu Shen , Yung-Cheng Lu
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment to modulate a stress of the stressed layer. The post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof.
Public/Granted literature
- US07629273B2 Method for modulating stresses of a contact etch stop layer Public/Granted day:2009-12-08
Information query
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