发明申请
- 专利标题： Method for modulating stresses of a contact etch stop layer
- 专利标题（中）： 用于调节接触蚀刻停止层的应力的方法
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申请号： US11523674申请日： 2006-09-19
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公开(公告)号： US20080085607A1公开(公告)日： 2008-04-10
- 发明人: Chen-Hua Yu , Hung Chun Tsai , Hui-Lin Chang , Ting-Yu Shen , Yung-Cheng Lu
- 申请人： Chen-Hua Yu , Hung Chun Tsai , Hui-Lin Chang , Ting-Yu Shen , Yung-Cheng Lu
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment to modulate a stress of the stressed layer. The post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof.
公开/授权文献
- US07629273B2 Method for modulating stresses of a contact etch stop layer 公开/授权日：2009-12-08
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