发明申请
- 专利标题: Method to deposit conformal low temperature SiO2
- 专利标题(中): 沉积保温低温SiO2的方法
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申请号: US11543515申请日: 2006-10-05
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公开(公告)号: US20080085612A1公开(公告)日: 2008-04-10
- 发明人: John A. Smythe , Gurtej S. Sandhu , Brian J. Coppa , Shyam Surthi , Shuang Meng
- 申请人: John A. Smythe , Gurtej S. Sandhu , Brian J. Coppa , Shyam Surthi , Shuang Meng
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
Methods of controlling critical dimensions of reduced-sized features during semiconductor fabrication through pitch multiplication are disclosed. Pitch multiplication is accomplished by patterning mask structures via conventional photoresist techniques and subsequently transferring the pattern to a sacrificial material. Spacer regions are then formed on the vertical surfaces of the transferred pattern following the deposition of a conformal material via atomic layer deposition. The spacer regions, and therefore the reduced features, are then transferred to a semiconductor substrate.
公开/授权文献
- US08129289B2 Method to deposit conformal low temperature SiO2 公开/授权日:2012-03-06