发明申请
- 专利标题： Flash memory device and method for manufacturing the same
- 专利标题（中）： 闪存装置及其制造方法
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申请号： US11653166申请日： 2007-01-12
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公开(公告)号： US20080093660A1公开(公告)日： 2008-04-24
- 发明人: Hee-Sook Park , Byung-Hak Lee , Tae-Ho Cha , Woong-Hee Sohn , Jang-Hee Lee , Jae-Hwa Park
- 申请人： Hee-Sook Park , Byung-Hak Lee , Tae-Ho Cha , Woong-Hee Sohn , Jang-Hee Lee , Jae-Hwa Park
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR2006-102587 20061020
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
A flash memory device includes a semiconductor substrate, a gate insulating layer having a first width formed on the semiconductor substrate to trap carriers tunneled from the semiconductor substrate and a metal electrode on the gate insulating layer to receive a voltage required for tunneling. The metal electrode having a second width smaller than the first width. The flash memory device further includes a sidewall spacer surrounding a side surface of the metal electrode to prevent oxidation of the metal electrode.
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