发明申请
US20080096385A1 SLURRY COMPOSITION FOR FORMING TUNGSTEN PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
审中-公开
用于形成图案的浆料组合物和使用其制造半导体器件的方法
- 专利标题: SLURRY COMPOSITION FOR FORMING TUNGSTEN PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题(中): 用于形成图案的浆料组合物和使用其制造半导体器件的方法
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申请号: US11862443申请日: 2007-09-27
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公开(公告)号: US20080096385A1公开(公告)日: 2008-04-24
- 发明人: Seok Kim , Hyu Park , Ki Yang , Gyu Jin
- 申请人: Seok Kim , Hyu Park , Ki Yang , Gyu Jin
- 申请人地址: KR Icheon-si KR Seongnam-si
- 专利权人: Hynix Semiconductor Inc.,Techno Semichem Co., Ltd.
- 当前专利权人: Hynix Semiconductor Inc.,Techno Semichem Co., Ltd.
- 当前专利权人地址: KR Icheon-si KR Seongnam-si
- 优先权: KR10-2006-0094347 20060927; KR10-2007-0096133 20070920
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; C09K13/00 ; C09K13/02
摘要:
A method for manufacturing a semiconductor device with a slurry composition for forming a tungsten pattern. The method comprises: forming a trench in an insulating film formed on a substrate; depositing a tungsten film over the insulating film including the trench; first polishing a tungsten film with a first slurry for polishing metal to expose the insulating film, the polishing selectivity ratio of the first slurry onto tungsten/insulating film being range from 30 to 100; and second polishing the insulating film and the tungsten film with a second slurry, the polishing selectivity ratio of the second slurry onto insulating film/tungsten being range from 3 to 500. The method reduces a thickness difference of tungsten patterns, thereby improving a production yield of semiconductor devices.