发明申请
- 专利标题： Organic field effect transistor and semiconductor device
- 专利标题（中）： 有机场效应晶体管和半导体器件
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申请号： US11657718申请日： 2007-01-25
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公开(公告)号： US20080099757A1公开(公告)日： 2008-05-01
- 发明人: Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
- 申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
- 优先权： JP2006-017431 20060126
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/76 ; H01L35/24 ; H01L51/00
摘要：
It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
公开/授权文献
- US08049206B2 Organic field effect transistor and semiconductor device 公开/授权日：2011-11-01
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