公开(公告)号：US08362474B2

公开(公告)日：2013-01-29

申请号：US13280596

申请日：2011-10-25

申请人： Shinobu Furukawa ,  Ryota Imahayashi ,  Kaoru Kato

发明人： Shinobu Furukawa ,  Ryota Imahayashi ,  Kaoru Kato

IPC分类号： H01L51/30

CPC分类号： C07D209/88 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0508

摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.

摘要翻译： 本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。 在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物 ） 用来。 通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

公开(公告)号：US08049206B2

公开(公告)日：2011-11-01

申请号：US11657718

申请日：2007-01-25

申请人： Shinobu Furukawa ,  Ryota Imahayashi ,  Kaoru Kato

发明人： Shinobu Furukawa ,  Ryota Imahayashi ,  Kaoru Kato

IPC分类号： H01L51/30

CPC分类号： C07D209/88 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0508

摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.

摘要翻译： 本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。 在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物 ） 用来。 通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

公开(公告)号：US20080099757A1

公开(公告)日：2008-05-01

申请号：US11657718

申请日：2007-01-25

申请人： Shinobu Furukawa ,  Ryota Imahayashi ,  Kaoru Kato

发明人： Shinobu Furukawa ,  Ryota Imahayashi ,  Kaoru Kato

IPC分类号： H01L29/08 ,  H01L29/76 ,  H01L35/24 ,  H01L51/00

CPC分类号： C07D209/88 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0508

摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.

摘要翻译： 本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。 在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物 ） 用来。 通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

公开(公告)号：US07560735B2

公开(公告)日：2009-07-14

申请号：US11379014

申请日：2006-04-17

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L31/12

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的有机晶体管。 本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。 根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层 具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

公开(公告)号：US08343816B2

公开(公告)日：2013-01-01

申请号：US12850652

申请日：2010-08-05

申请人： Ryota Imahayashi ,  Shinobu Furukawa ,  Atsuo Isobe ,  Yasuyuki Arai ,  Shunpei Yamazaki

发明人： Ryota Imahayashi ,  Shinobu Furukawa ,  Atsuo Isobe ,  Yasuyuki Arai ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L51/0512 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31683 ,  H01L51/0002 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566

摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

摘要翻译： 本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。 本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜 电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

公开(公告)号：US08164098B2

公开(公告)日：2012-04-24

申请号：US12498512

申请日：2009-07-07

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L31/12

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的有机晶体管。 本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。 根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层 具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

公开(公告)号：US07875494B2

公开(公告)日：2011-01-25

申请号：US12699962

申请日：2010-02-04

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L21/34

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

公开(公告)号：US07919772B2

公开(公告)日：2011-04-05

申请号：US11791502

申请日：2005-12-08

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L29/08

CPC分类号： H01L51/0512 ,  H01L21/28273 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081

摘要： A nonvolatile memory has a problem in that applied voltage is high. This is because a carrier needs to be injected into a floating gate through an insulating film by a tunneling effect. In addition, there is concern about deterioration of the insulating film by performing such carrier injection. An object of the present invention is to provide a memory in which applied voltage is lowered and deterioration of an insulating film is prevented. One feature is to use a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound as a layer functioning as a floating gate of a memory. A specific example is an element having a transistor structure where a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound and which is sandwiched between insulating layers is used as a floating gate.

摘要翻译： 非易失性存储器具有施加电压高的问题。 这是因为载体需要通过隧道效应通过绝缘膜注入浮栅。 此外，通过进行这样的载体注入，担心绝缘膜的劣化。 本发明的目的是提供一种其中施加电压降低并且防止绝缘膜劣化的存储器。 一个特征是使用具有电荷转移络合物的无机化合物与有机化合物混合的层作为用作存储器的浮动栅极的层。 具体实例是具有晶体管结构的元件，其中将具有电荷转移络合物的无机化合物与有机化合物混合并且夹在绝缘层之间的层用作浮栅。

公开(公告)号：US20060214160A1

公开(公告)日：2006-09-28

申请号：US11376198

申请日：2006-03-16

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L29/08

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0562

摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.

摘要翻译： 本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。 根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。 由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

公开(公告)号：US08592821B2

公开(公告)日：2013-11-26

申请号：US13447446

申请日：2012-04-16

申请人： Shinobu Furukawa ,  Ryota Imahayashi

发明人： Shinobu Furukawa ,  Ryota Imahayashi

IPC分类号： H01L27/14

CPC分类号： H01L51/105 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5203 ,  H01L51/5296

摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.