Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING SCHOTTKY JUNCTION AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 具有肖特基结的半导体器件及其制造方法
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Application No.: US11944953Application Date: 2007-11-26
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Publication No.: US20080121934A1Publication Date: 2008-05-29
- Inventor: Keita MATSUDA
- Applicant: Keita MATSUDA
- Applicant Address: JP Nakakoma-gun
- Assignee: EUDYNA DEVICES INC.
- Current Assignee: EUDYNA DEVICES INC.
- Current Assignee Address: JP Nakakoma-gun
- Priority: JP2006-316508 20061124
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/338
Abstract:
A semiconductor device includes: a nitride semiconductor layer including a channel layer, a Schottky electrode that contacts the nitride semiconductor layer and contains indium, and an ohmic electrode that contacts the channel layer. The nitride semiconductor layer includes a layer that contacts the Schottky electrode and contains AlGaN, InAlGaN or GaN. The Schottky electrode that contains indium includes one of an indium oxide layer and an indium tin oxide layer.
Public/Granted literature
- US07875538B2 Semiconductor device having schottky junction and method for manufacturing the same Public/Granted day:2011-01-25
Information query
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