公开(公告)号：US08259766B2

公开(公告)日：2012-09-04

申请号：US12241927

申请日：2008-09-30

Applicant: Hidetoshi Naito

Inventor： Hidetoshi Naito

IPC: H01S3/00

CPC classification number: H01S5/06213 ,  H01S5/0427 ,  H01S5/06825 ,  H03K5/1565 ,  H03K19/018514 ,  H03K19/09441

Abstract: A laser diode drive circuit includes: a duty control amplifier (23) that controls the duty ratio of a main signal for laser control in accordance with a duty control signal; and an AND gate (22) that outputs the duty control signal to the duty control amplifier (23), and outputs a duty control signal that controls the duty ratio of the main signal to be 0% in the duty control amplifier in accordance with a shutdown signal of a laser diode. With this structure, there is no need to input the main signal having the duty ratio controlled to a logic circuit that becomes unstable. Thus, outputs from a semiconductor laser can be shut down, and the output duty can be controlled in a stable manner.

Abstract translation: 激光二极管驱动电路包括：占空比控制放大器（23），其根据占空比控制信号控制用于激光控制的主信号的占空比; 以及将占空比控制信号输出到占空比控制放大器（23）的与门（22），并且根据占空比控制放大器（23）输出占空比控制信号，该占空比控制信号在占空比控制放大器中控制主信号的占空比为0％ 激光二极管的关断信号。 利用这种结构，不需要将占空比的主信号输入到不稳定的逻辑电路。 因此，可以关闭来自半导体激光器的输出，并且可以稳定地控制输出占空比。

公开(公告)号：US08105866B2

公开(公告)日：2012-01-31

申请号：US12711881

申请日：2010-02-24

Applicant: Yoshihiro Yoneda ,  Ryuji Yamabi

Inventor： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC: H01L21/00 ,  H01L31/102 ,  H01L21/027 ,  H01L21/20

CPC classification number: H01L31/105 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/18

Abstract: A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

Abstract translation: 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底，第一半导体层，第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上，与半导体衬底晶格匹配，包括第一导电型掺杂剂，并且具有第一带隙能量。 第二半导体层设置在第一半导体层上，具有第一带隙能量，并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量，并且具有5nm至50nm的厚度。

公开(公告)号：US07907650B2

公开(公告)日：2011-03-15

申请号：US11392547

申请日：2006-03-30

Applicant: Haruyoshi Ono ,  Isao Baba

Inventor： Haruyoshi Ono ,  Isao Baba

IPC: H01S3/00

CPC classification number: H01S5/06804 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/0617 ,  H01S5/0683 ,  H01S5/0687 ,  H04B10/572

Abstract: A laser module includes a semiconductor laser, an output optical system provided on an optical output side of the semiconductor laser, a temperature detecting element that detects a temperature of the output optical system; and an output controller that calculates a drive current to set an optical output intensity of the laser module at a desired value on the basis of temperature information obtained by the temperature detecting element, and outputs the drive current to the semiconductor laser.

Abstract translation: 激光模块包括半导体激光器，设置在半导体激光器的光输出侧的输出光学系统，检测输出光学系统的温度的温度检测元件; 以及输出控制器，其基于由温度检测元件获得的温度信息，计算驱动电流以将激光器模块的光输出强度设定在期望值，并将驱动电流输出到半导体激光器。

公开(公告)号：US07738844B2

公开(公告)日：2010-06-15

申请号：US11094532

申请日：2005-03-31

Applicant: Hiroshi Nakano ,  Yasutake Hirachi

Inventor： Hiroshi Nakano ,  Yasutake Hirachi

IPC: H01Q11/12 ,  H04B1/04

CPC classification number: H03D9/0633 ,  H04B1/04

Abstract: A radio communication device includes: a local oscillator; an amplifier amplifying an output signal of the local oscillator and outputting a local oscillation frequency and a harmonic wave component thereof; and a harmonic mixer receiving an output signal of the amplifier and an information signal, and generating an up-converted signal of the information signal with the harmonic wave component based on the local oscillation frequency, while allowing the harmonic wave component to pass through.

Abstract translation: 无线电通信设备包括：本地振荡器; 放大本地振荡器的输出信号并输出​​本地振荡频率及其谐波分量的放大器; 以及接收放大器的输出信号和信息信号的谐波混合器，并且在允许谐波分量通过的同时，基于本地振荡频率产生具有谐波分量的信息信号的上变频信号。

公开(公告)号：US20100091805A1

公开(公告)日：2010-04-15

申请号：US12640897

申请日：2009-12-17

Applicant: Tsutomu Ishikawa ,  Takuya Fujii

Inventor： Tsutomu Ishikawa ,  Takuya Fujii

IPC: H01S5/026 ,  H01S5/06

CPC classification number: H01S5/06256 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01S5/02276 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/1209 ,  H01L2924/00014

Abstract: An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

Abstract translation: 光学半导体器件包括光学半导体元件，金属图案和至少一种导热材料。 光半导体元件具有第一光波导区域和第二光波导区域。 第二光波导区域光耦合到第一光波导区域并且具有用于改变第二光波导区域的折射率的加热器。 金属图案设置在要耦合到温度控制装置的区域上。 导热材料将金属图案与光半导体元件的第一光波导区域的上表面相连。 导热材料与第一光波导区域电分离。

公开(公告)号：US07609070B2

公开(公告)日：2009-10-27

申请号：US11902392

申请日：2007-09-21

Applicant: Tomohiro Kagiyama ,  Yasuhiro Tosaka ,  Norikazu Iwagami

Inventor： Tomohiro Kagiyama ,  Yasuhiro Tosaka ,  Norikazu Iwagami

IPC: G01R31/12 ,  G01R31/08 ,  G01R31/26

CPC classification number: G01R31/028 ,  Y10T29/435

Abstract: A manufacturing method of an electronic device includes applying a direct voltage having a first polarity to a capacitor that has an insulating layer including nitrogen and silicon as a capacitor dielectric layer, testing the capacitor to which the direct voltage having the first polarity is applied and determining a nondefective capacitor and a defective capacitor, and applying a direct voltage having a second polarity to the nondefective capacitor. The second polarity is opposite to the first polarity.

Abstract translation: 一种电子设备的制造方法，包括将具有第一极性的直流电压施加到具有包括氮和硅的绝缘层的电容器作为电容器电介质层，测试施加具有第一极性的直流电压的电容器，并确定 无损电容器和有缺陷的电容器，并且向无损电容器施加具有第二极性的直流电压。 第二极性与第一极性相反。

公开(公告)号：US07560346B2

公开(公告)日：2009-07-14

申请号：US11727962

申请日：2007-03-29

Applicant: Takeshi Igarashi

Inventor： Takeshi Igarashi

IPC: H01L21/336 ,  H01L29/76

CPC classification number: H01L27/0207 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/41758 ,  H01L29/42316

Abstract: A semiconductor device includes: a first FET that is formed with first unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the first unit FETs being connected in parallel; and a second FET that is formed with second unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the second unit FETs being connected in parallel. In this semiconductor device, the second finger electrode of each of the first unit FETs and the first finger electrode of each corresponding one of the second unit FETs form a common finger electrode, and the first finger electrodes of the first unit FETs, the second finger electrodes of the second unit FETs, and the common finger electrodes are arranged in the gate length direction of the first FET and the second FET.

Abstract translation: 半导体器件包括：第一FET，其形成有第一单元FET，每个第一单元FET具有设置在栅极指电极的任一侧上的第一指状电极和第二指状电极，所述第一单元FET并联连接; 以及第二FET，其由具有设置在栅极指状电极的任一侧上的第一指状电极和第二指状电极的第二单位FET形成，所述第二单位FET并联连接。 在该半导体器件中，第一单位FET中的每一个的第二指状电极和每个对应的一个第二单位FET的第一指状电极形成公共指状电极，并且第一单位FET的第一指状电极，第二指状物 第二单元FET的电极和公共指状电极排列在第一FET和第二FET的栅极长度方向上。

公开(公告)号：US07539385B2

公开(公告)日：2009-05-26

申请号：US11979136

申请日：2007-10-31

Applicant: Ayahito Uetake ,  Tatsuya Takeuchi

Inventor： Ayahito Uetake ,  Tatsuya Takeuchi

IPC: G02B6/10

CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2201 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/34306 ,  H01S5/34373 ,  H01S5/50 ,  H01S2304/04

Abstract: An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.

Abstract translation: 光学半导体包括具有（100）主表面的半导体衬底，形成在所述半导体衬底的第一区域上的波导台面条，所述波导台面条引导光通过; 在第一区域的前侧的第二区域中形成在半导体衬底上的多个虚拟台面图案，以及形成在半导体衬底上以半导体衬底连续覆盖第一和第二区域的半绝缘掩埋半导体层，半 - 绝缘半导体层，其填充所述第一区域中的所述波导台面条的右侧和左侧以及所述第二区域中的所述多个虚拟台面图案之间的间隙。

公开(公告)号：US07521707B2

公开(公告)日：2009-04-21

申请号：US11385749

申请日：2006-03-22

Applicant: Takeshi Kawasaki ,  Ken Nakata ,  Hiroshi Yano

Inventor： Takeshi Kawasaki ,  Ken Nakata ,  Hiroshi Yano

IPC: H01L29/06

CPC classification number: H01L29/7781 ,  H01L29/1033 ,  H01L29/2003

Abstract: A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.

Abstract translation: 半导体器件包括：AlGaN电子供给层，其在与衬底平面的厚度方向上具有[000-1]晶体取向，形成在AlGaN电子供给层上的GaN电子传输层，形成在GaN电子传输 栅电极所在的源电极和漏电极，源电极和漏电极形成在GaN电子传输层上。

公开(公告)号：US07515779B2

公开(公告)日：2009-04-07

申请号：US11727959

申请日：2007-03-29

Applicant: Tsutomu Ishikawa

Inventor： Tsutomu Ishikawa

IPC: G02F1/295 ,  G02F1/01 ,  G02F1/035 ,  G02B6/26 ,  G02B6/42

CPC classification number: H01S5/0612 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125

Abstract: An optical semiconductor device has a heater, an optical waveguide layer, a first electrode and a second electrode. The heater is provided on a first semiconductor region and has more than one heater segment coupled or separated to each other. The optical waveguide layer is provided in the first semiconductor region and receives heat from the heater. The first electrode is coupled to a connecting point of the heater segments adjacent to each other. The second electrodes are electrically common and are coupled to other ends of the heater segments in opposite side of the connecting point respectively.

Abstract translation: 光学半导体器件具有加热器，光波导层，第一电极和第二电极。 加热器设置在第一半导体区域上，并且具有多个彼此耦合或分离的加热器段。 光波导层设置在第一半导体区域中并且从加热器接收热量。 第一电极耦合到彼此相邻的加热器段的连接点。 第二电极是电气公共的，并且分别耦合到加热器段的连接点的相对侧的另一端。