发明申请
- 专利标题： METHOD OF FORMING DIELECTRIC LAYER
- 专利标题（中）： 形成介质层的方法
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申请号： US11534583申请日： 2006-09-22
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公开(公告)号： US20080124940A1公开(公告)日： 2008-05-29
- 发明人: Hsu-Sheng Yu , Shing-Ann Lo , Ta-Hung Yang
- 申请人： Hsu-Sheng Yu , Shing-Ann Lo , Ta-Hung Yang
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.
公开/授权文献
- US07648921B2 Method of forming dielectric layer 公开/授权日：2010-01-19
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