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    METHOD OF FORMING DIELECTRIC LAYER
    1.
    发明申请
    METHOD OF FORMING DIELECTRIC LAYER 有权
    形成介质层的方法

    公开(公告)号：US20080124940A1

    公开(公告)日：2008-05-29

    申请号：US11534583

    申请日：2006-09-22

    申请人： Hsu-Sheng Yu ,  Shing-Ann Lo ,  Ta-Hung Yang

    发明人： Hsu-Sheng Yu ,  Shing-Ann Lo ,  Ta-Hung Yang

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76837

    摘要： A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.

    摘要翻译： 提供一种形成电介质层的方法。 在其上形成有金属层的基板上形成第一介电层。 第一电介质层包括在两个相邻的金属层之间的空间中的突出端和在突出端下方的空隙。 部分地去除第一介电层以切断突出端并露出空隙，因此形成开口。 在电介质层上形成第二电介质层以填满开口。

    Method of forming dielectric layer
    2.
    发明授权
    Method of forming dielectric layer 有权
    形成介电层的方法

    公开(公告)号：US07648921B2

    公开(公告)日：2010-01-19

    申请号：US11534583

    申请日：2006-09-22

    申请人： Hsu-Sheng Yu ,  Shing-Ann Lo ,  Ta-Hung Yang

    发明人： Hsu-Sheng Yu ,  Shing-Ann Lo ,  Ta-Hung Yang

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76837

    摘要： A method of forming a dielectric layer is provided. A first dielectric layer is formed on a substrate having metal layers formed thereon. The first dielectric layer includes overhangs in the spaces between two neighboring metal layers and voids under the overhangs. The first dielectric layer is partially removed to cut off the overhangs and expose the voids and therefore openings are formed. A second dielectric layer is formed on the dielectric layer to fill up the opening.

    摘要翻译： 提供一种形成电介质层的方法。 在其上形成有金属层的基板上形成第一介电层。 第一电介质层包括在两个相邻的金属层之间的空间中的突出端和在突出端下方的空隙。 部分地去除第一介电层以切断突出端并露出空隙，因此形成开口。 在电介质层上形成第二电介质层以填满开口。

    Non-volatile memory cell and method for manufacturing the same
    3.
    发明申请
    Non-volatile memory cell and method for manufacturing the same 审中-公开
    非易失性存储单元及其制造方法

    公开(公告)号：US20070111449A1

    公开(公告)日：2007-05-17

    申请号：US11281272

    申请日：2005-11-16

    申请人： Hsu-Sheng Yu ,  Chun-Hung Lee

    发明人： Hsu-Sheng Yu ,  Chun-Hung Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： The invention is directed to a method for manufacturing a non-volatile memory. The method comprises steps of forming a stacked gate structure over a substrate, wherein the stacked gate structure is composed of, from the bottom to the top of the stacked gate structure, a first dielectric layer, a charge storage layer, a second dielectric layer, a conductive layer and a cap layer. A source/drain region is formed in the substrate. A protective layer is formed on the sidewall of the stacked gate structure. An etching process is performed to remove the cap layer, wherein, in the etching process, the cap layer and the protective layer have different etching rate.

    摘要翻译： 本发明涉及一种用于制造非易失性存储器的方法。 该方法包括以下步骤：在衬底上形成堆叠的栅极结构，其中堆叠的栅极结构由堆叠的栅极结构的底部到顶部由第一介电层，电荷存储层，第二介电层， 导电层和盖层。 源极/漏极区域形成在衬底中。 在层叠栅极结构的侧壁上形成保护层。 进行蚀刻处理以去除覆盖层，其中在蚀刻工艺中，覆盖层和保护层具有不同的蚀刻速率。

    Method of simultaneously fabricating isolation structures having rounded and unrounded corners
    4.
    发明申请
    Method of simultaneously fabricating isolation structures having rounded and unrounded corners 有权
    同时制造具有圆形和未圆角的隔离结构的方法

    公开(公告)号：US20050106871A1

    公开(公告)日：2005-05-19

    申请号：US10713764

    申请日：2003-11-14

    申请人： Hsu-Sheng Yu

    发明人： Hsu-Sheng Yu

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/44 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/8239 ,  H01L27/105

    CPC分类号： H01L21/76229 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/76232

    摘要： A method facilitates generally simultaneously fabricating a number of shallow trench isolation structures such that some selected ones of the shallow trench isolation structures have rounded corners and other selected ones of the shallow trench isolation structures do not have rounded corners. The method includes forming patterned photoresist over a hard mask so that portions of the hard mask are exposed over a portion of a cell region and over a portion of a periphery region, and then removing the exposed hard mask layer in the periphery region while removing a portion of the exposed hard mask layer in the cell region. A trench having rounded corners is then partially formed in the periphery region and more of the hard mask layer is removed in the cell region, before the trench in the periphery region is deepened while a trench in the cell region is formed.

    摘要翻译： 一种方法通常同时制造多个浅沟槽隔离结构，使得一些选择的浅沟槽隔离结构具有圆角，并且浅沟槽隔离结构中的其它选定的浅沟槽隔离结构不具有圆角。 该方法包括在硬掩模上形成图案化的光致抗蚀剂，使得硬掩模的一部分暴露在单元区域的一部分和外围区域的一部分上，然后在外围区域中去除暴露的硬掩模层，同时移除 暴露的硬掩模层的部分在细胞区域中。 然后在外围区域中部分地形成具有圆角的沟槽，并且在形成电池区域中的沟槽的同时，在外围区域中的沟槽加深之前，在电池区域中去除更多的硬掩模层。

    Method of simultaneously fabricating isolation structures having rounded and unrounded corners
    6.
    发明授权
    Method of simultaneously fabricating isolation structures having rounded and unrounded corners 有权
    同时制造具有圆形和未圆角的隔离结构的方法

    公开(公告)号：US07244680B2

    公开(公告)日：2007-07-17

    申请号：US10713764

    申请日：2003-11-14

    申请人： Hsu-Sheng Yu

    发明人： Hsu-Sheng Yu

    IPC分类号： H01L21/302 ,  H01L21/3065

    CPC分类号： H01L21/76229 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/76232

    摘要： A method facilitates generally simultaneously fabricating a number of shallow trench isolation structures such that some selected ones of the shallow trench isolation structures have rounded corners and other selected ones of the shallow trench isolation structures do not have rounded corners. The method includes forming patterned photoresist over a hard mask so that portions of the hard mask are exposed over a portion of a cell region and over a portion of a periphery region, and then removing the exposed hard mask layer in the periphery region while removing a portion of the exposed hard mask layer in the cell region. A trench having rounded corners is then partially formed in the periphery region and more of the hard mask layer is removed in the cell region, before the trench in the periphery region is deepened while a trench in the cell region is formed.

    摘要翻译： 一种方法通常同时制造多个浅沟槽隔离结构，使得一些选择的浅沟槽隔离结构具有圆角，并且浅沟槽隔离结构中的其它选定的浅沟槽隔离结构不具有圆角。 该方法包括在硬掩模上形成图案化的光致抗蚀剂，使得硬掩模的一部分暴露在单元区域的一部分和外围区域的一部分上，然后在外围区域中去除暴露的硬掩模层，同时移除 暴露的硬掩模层的部分在细胞区域中。 然后在外围区域中部分地形成具有圆角的沟槽，并且在形成电池区域中的沟槽的同时，在外围区域中的沟槽加深之前，在电池区域中去除更多的硬掩模层。

    Method of simultaneously fabricating isolation structures having rounded and unrounded corners
    7.
    发明申请
    Method of simultaneously fabricating isolation structures having rounded and unrounded corners 有权

    公开(公告)号：US20070122993A1

    公开(公告)日：2007-05-31

    申请号：US11642304

    申请日：2006-12-20

    申请人： Hsu-Sheng Yu

    发明人： Hsu-Sheng Yu

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76229 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/76232

    摘要： A method facilitates generally simultaneously fabricating a number of shallow trench isolation structures such that some selected ones of the shallow trench isolation structures have rounded corners and other selected ones of the shallow trench isolation structures do not have rounded corners. The method includes forming patterned photoresist over a hard mask so that portions of the hard mask are exposed over a portion of a cell region and over a portion of a periphery region, and then removing the exposed hard mask layer in the periphery region while removing a portion of the exposed hard mask layer in the cell region. A trench having rounded corners is then partially formed in the periphery region and more of the hard mask layer is removed in the cell region, before the trench in the periphery region is deepened while a trench in the cell region is formed.

    Methods of simultaneously fabricating isolation structures having varying dimensions
    8.
    发明授权
    Methods of simultaneously fabricating isolation structures having varying dimensions 有权
    同时制造具有不同尺寸的隔离结构的方法

    公开(公告)号：US06995095B2

    公开(公告)日：2006-02-07

    申请号：US10683305

    申请日：2003-10-10

    申请人： Hsu-Sheng Yu

    发明人： Hsu-Sheng Yu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/76229 ,  H01L21/76232

    摘要： Shallow trench isolation structures are simultaneously fabricated such that ones in a cell region have first-type features and others in a periphery region have second-type features. The first-type features can be rounded edges or can be first depths and widths, and the second-type features can be unrounded edges or can be second depths and widths which are different from the first depths and widths. The method includes forming patterned photoresist over a hard mask over portions of a cell and a periphery region, and removing the exposed hard mask layer in the periphery region while removing a portion of the exposed hard mask layer in the cell region. A trench is then partially formed in the periphery region and more of the hard mask layer is removed in the cell region, followed by the trench in the periphery region being deepened while a trench in the cell region is formed.

    摘要翻译： 同时制造浅沟槽隔离结构，使得细胞区域中的细胞区域具有第一类型特征，而外周区域中的其它结构具有第二类型特征。 第一类型特征可以是圆形边缘或者可以是第一深度和宽度，并且第二类型特征可以是未周边的边缘，或者可以是与第一深度和宽度不同的第二深度和宽度。 该方法包括在单元和外围区域的部分上在硬掩模上形成图案化的光致抗蚀剂，以及去除外围区域中暴露的硬掩模层，同时移除单元区域中暴露的硬掩模层的一部分。 然后在外围区域部分地形成沟槽，并且在单元区域中去除更多的硬掩模层，随后在外围区域中的沟槽加深，同时在单元区域中形成沟槽。

    Methods of fabricating memory cells for nonvolatile memory devices
    9.
    发明授权
    Methods of fabricating memory cells for nonvolatile memory devices 有权
    制造非易失性存储器件存储单元的方法

    公开(公告)号：US06551899B1

    公开(公告)日：2003-04-22

    申请号：US10172066

    申请日：2002-06-14

    申请人： Hsu-Sheng Yu ,  Chun-Hung Lee

    发明人： Hsu-Sheng Yu ,  Chun-Hung Lee

    IPC分类号： H01L2176

    CPC分类号： H01L27/11517 ,  H01L27/115

    摘要： A method for fabricating nonvolatile memory devices includes forming one or more polyislands, each having a conductive layer and a dielectric layer, on a dielectric layer of a substrate before the creation of control gates on the memory device. In particular, the polyislands may be formed by providing a substrate with a dielectric layer on a surface of the substrate, and forming one or more bar-like structures on the substrate. Each of the bar-like structures includes a conductive layer and a dielectric layer. The bar-like structures are then patterned with compositions having various etching sensitivities for the components of the bar-like structures, to thereby create one or more polyislands before the addition of a second conductive layer over the resulting structure.

    摘要翻译： 一种用于制造非易失性存储器件的方法包括在存储器件上形成控制栅极之前，在衬底的电介质层上形成一个或多个各自具有导电层和介电层的聚异氰酸酯。 特别地，可以通过在衬底的表面上提供具有介电层的衬底并在衬底上形成一个或多个棒状结构来形成多晶体。 每个棒状结构都包括导电层和电介质层。 然后使用具有针对棒状结构的部件的各种蚀刻敏感性的组合物对条状结构进行构图，从而在所得结构上添加第二导电层之前产生一个或多个聚异氰酸酯。