发明申请
- 专利标题： Damascene metal-insulator-metal (MIM) device
- 专利标题（中）： 大马士革金属绝缘子金属（MIM）器件
-
申请号： US11633929申请日： 2006-12-05
-
公开(公告)号： US20080132068A1公开(公告)日： 2008-06-05
- 发明人: Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
- 申请人： Suzette K. Pangrle , Steven Avanzino , Sameer Haddad , Michael VanBuskirk , Manuj Rathor , James Xie , Kevin Song , Christie Marrian , Bryan Choo , Fei Wang , Jeffrey A. Shields
- 专利权人： Spansion LLC, Advanced Micro Devices, Inc.
- 当前专利权人： Spansion LLC, Advanced Micro Devices, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, and providing a second conductive body in the opening.
公开/授权文献
- US08089113B2 Damascene metal-insulator-metal (MIM) device 公开/授权日：2012-01-03