发明申请
- 专利标题: SEMICONDUCTOR SUBSTRATE HAVING A PROTECTION LAYER AT THE SUBSTRATE BACK SIDE
- 专利标题(中): 在基板背面有保护层的半导体基板
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申请号: US11757575申请日: 2007-06-04
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公开(公告)号: US20080132072A1公开(公告)日: 2008-06-05
- 发明人: Tobias Letz , Holger Schuehrer , Markus Nopper
- 申请人: Tobias Letz , Holger Schuehrer , Markus Nopper
- 优先权: DE102006056598.3 20061130
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; B32B9/04
摘要:
By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.
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