公开(公告)号：US20080132072A1

公开(公告)日：2008-06-05

申请号：US11757575

申请日：2007-06-04

申请人： Tobias Letz ,  Holger Schuehrer ,  Markus Nopper

发明人： Tobias Letz ,  Holger Schuehrer ,  Markus Nopper

IPC分类号： H01L21/311 ,  B32B9/04

CPC分类号： H01L23/296 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/00

摘要： By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.

摘要翻译： 通过在任何可能在背面沉积材料或材料残留物的工艺序列之前在衬底的背面形成保护层，可以显着增强各自的背面均匀性，从而也提高随后的背面临界的工艺效率 工艺，例如平版印刷，线后处理等。 在一个说明性实施例中，碳化硅可用作形成相应保护层的材料。

公开(公告)号：US07781343B2

公开(公告)日：2010-08-24

申请号：US11757575

申请日：2007-06-04

申请人： Tobias Letz ,  Holger Schuehrer ,  Markus Nopper

发明人： Tobias Letz ,  Holger Schuehrer ,  Markus Nopper

IPC分类号： H01L21/311

CPC分类号： H01L23/296 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/00

摘要： By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.

摘要翻译： 通过在任何可能在背面沉积材料或材料残留物的工艺序列之前在衬底的背面形成保护层，可以显着增强各自的背面均匀性，从而也提高随后的背面临界的工艺效率 工艺，例如平版印刷，线后处理等。 在一个说明性实施例中，碳化硅可用作形成相应保护层的材料。

公开(公告)号：US20070123034A1

公开(公告)日：2007-05-31

申请号：US11468834

申请日：2006-08-31

申请人： Holger Schuehrer ,  Tobias Letz ,  Frank Koschinsky

发明人： Holger Schuehrer ,  Tobias Letz ,  Frank Koschinsky

IPC分类号： H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/02071 ,  H01L21/76814 ,  H01L21/76843

摘要： By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.

摘要翻译： 通过在形成连接到高反应性金属区域的开口形成薄钝化层之后，可以显着地减少任何排队时间效应。 在沉积阻挡层/粘合层之前，可以在热处理的基础上有效地去除钝化层，以便通过蒸发引发材料去除。

公开(公告)号：US07820536B2

公开(公告)日：2010-10-26

申请号：US11468834

申请日：2006-08-31

申请人： Holger Schuehrer ,  Tobias Letz ,  Frank Koschinsky

发明人： Holger Schuehrer ,  Tobias Letz ,  Frank Koschinsky

IPC分类号： H01L21/20

CPC分类号： H01L21/76829 ,  H01L21/02071 ,  H01L21/76814 ,  H01L21/76843

摘要： By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.

摘要翻译： 通过在形成连接到高反应性金属区域的开口形成薄钝化层之后，可以显着地减少任何排队时间效应。 在沉积阻挡层/粘合层之前，可以在热处理的基础上有效地去除钝化层，以便通过蒸发引发材料去除。

公开(公告)号：US08426312B2

公开(公告)日：2013-04-23

申请号：US11531793

申请日：2006-09-14

申请人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

发明人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

IPC分类号： H01L21/461

CPC分类号： H01L21/02087 ,  H01L21/6708 ,  H01L21/76801 ,  H01L21/76877

摘要： By providing an etch stop layer selectively at the bevel, at least one additional wet chemical bevel etch process may be performed prior to or during the formation of a metallization layer without affecting the substrate material. Hence, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. The etch stop layer may be formed at an early manufacturing stage so that a bevel etch process may be performed at any desired stage of the formation of circuit elements.

摘要翻译： 通过在斜面上选择性地设置蚀刻停止层，可以在形成金属化层之前或期间执行至少一个附加的湿化学斜面蚀刻工艺，而不影响衬底材料。 因此，在形成任何阻挡层和金属层之前，电介质材料，特别是低k电介质材料可以从斜面被可靠地移除。 蚀刻停止层可以在早期制造阶段形成，从而可以在形成电路元件的任何期望阶段执行斜面蚀刻工艺。

公开(公告)号：US20070155133A1

公开(公告)日：2007-07-05

申请号：US11531793

申请日：2006-09-14

申请人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

发明人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

IPC分类号： H01L21/00

CPC分类号： H01L21/02087 ,  H01L21/6708 ,  H01L21/76801 ,  H01L21/76877

摘要： By providing an etch stop layer selectively at the bevel, at least one additional wet chemical bevel etch process may be performed prior to or during the formation of a metallization layer without affecting the substrate material. Hence, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. The etch stop layer may be formed at an early manufacturing stage so that a bevel etch process may be performed at any desired stage of the formation of circuit elements.

摘要翻译： 通过在斜面上选择性地设置蚀刻停止层，可以在形成金属化层之前或期间执行至少一个附加的湿化学斜面蚀刻工艺，而不影响衬底材料。 因此，在形成任何阻挡层和金属层之前，电介质材料，特别是低k电介质材料可以从斜面被可靠地移除。 蚀刻停止层可以在早期制造阶段形成，从而可以在形成电路元件的任何期望阶段执行斜面蚀刻工艺。

公开(公告)号：US08129276B2

公开(公告)日：2012-03-06

申请号：US12693545

申请日：2010-01-26

申请人： Ralf Richter ,  Kai Frohberg ,  Holger Schuehrer

发明人： Ralf Richter ,  Kai Frohberg ,  Holger Schuehrer

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/823475 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823425

摘要： In sophisticated semiconductor devices, a contact structure may be formed on the basis of a void positioned between closely spaced transistor elements wherein disadvantageous metal migration along the void may be suppressed by sealing the voids after etching a contact opening and prior to filling in the contact metal. Consequently, significant yield losses may be avoided in well-established dual stress liner approaches while, at the same time, superior device performance may be achieved.

摘要翻译： 在复杂的半导体器件中，可以基于位于紧密间隔的晶体管元件之间的空隙形成接触结构，其中沿着空隙的不利的金属迁移可以通过在蚀刻接触开口之后并且在填充接触金属之前密封空隙来抑制 。 因此，在已建立的双重应力衬垫方法中可以避免显着的屈服损失，同时可以实现优异的装置性能。

公开(公告)号：US20100109161A1

公开(公告)日：2010-05-06

申请号：US12565323

申请日：2009-09-23

申请人： Holger Schuehrer ,  Juergen Boemmels

发明人： Holger Schuehrer ,  Juergen Boemmels

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76831 ,  H01L21/76814 ,  H01L21/76832 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metallization systems on the basis of copper and low-k dielectric materials may be efficiently formed by providing an additional dielectric material of enhanced surface conditions after the patterning of the low-k dielectric material. Consequently, defects such as isolated copper voids and the like may be reduced without significantly affecting overall performance of the metallization system.

摘要翻译： 基于铜和低k电介质材料的金属化系统可以通过在低k介电材料的图案化之后提供增强的表面条件的附加电介质材料来有效地形成。 因此，可以降低诸如隔离铜空隙等的缺陷，而不会显着影响金属化系统的整体性能。

公开(公告)号：US20070178691A1

公开(公告)日：2007-08-02

申请号：US11536730

申请日：2006-09-29

申请人： Ralf Richter ,  Carsten Peters ,  Holger Schuehrer

发明人： Ralf Richter ,  Carsten Peters ,  Holger Schuehrer

IPC分类号： H01L21/4763

CPC分类号： H01L23/544 ,  H01L21/7684 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.

摘要翻译： 通过提供大面积金属板与相应的周边区域结合增加的粘合特性，可以有效地监测分层事件，而不会在加工和操作过程中不影响半导体器件的整体性能。 在一些示例性实施例中，可以在大面积金属板的周边设置虚拟通孔，从而允许中心区域分层，同时基本避免金属板的完全分层。 因此，可以有效地监测关于金属化层的机械特性以及工艺流程参数的有价值的信息。

公开(公告)号：US07638424B2

公开(公告)日：2009-12-29

申请号：US11536730

申请日：2006-09-29

申请人： Ralf Richter ,  Carsten Peters ,  Holger Schuehrer

发明人： Ralf Richter ,  Carsten Peters ,  Holger Schuehrer

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/544 ,  H01L21/7684 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.

摘要翻译： 通过提供大面积金属板与相应的周边区域结合增加的粘合特性，可以有效地监测分层事件，而不会在加工和操作过程中不影响半导体器件的整体性能。 在一些示例性实施例中，可以在大面积金属板的周边设置虚拟通孔，从而允许中心区域分层，同时基本避免金属板的完全分层。 因此，可以有效地监测关于金属化层的机械特性以及工艺流程参数的有价值的信息。