发明申请
- 专利标题： Radical Processing of a Sub-Nanometer Insulation Film
- 专利标题（中）： 亚纳米绝缘膜的自由基处理
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申请号： US11972503申请日： 2008-01-10
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公开(公告)号： US20080139000A1公开(公告)日： 2008-06-12
- 发明人: Masanobu IGETA , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
- 申请人： Masanobu IGETA , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2001-374631 20011207; JP2001-374632 20011207; JP2001-374633 20011207; JP2001-401210 20011228; JP2002-118477 20020419
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.
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