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公开(公告)号:US20080139000A1
公开(公告)日:2008-06-12
申请号:US11972503
申请日:2008-01-10
IPC分类号: H01L21/31
CPC分类号: H01L21/28185 , C23C16/34 , C23C16/405 , C23C16/482 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/3145 , H01L21/316 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67017 , H01L29/513 , H01L29/517 , H01L29/518
摘要: A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.
摘要翻译: 对绝缘膜进行氮化的方法包括以下步骤:通过在绝缘膜的表面供给氮自由基,通过高频等离子体形成氮自由基,并在其中含有氧的绝缘膜的表面发生氮化。