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发明申请
US20080142900A1 ABRUPT METAL-INSULATOR TRANSITION DEVICE, CIRCUIT FOR REMOVING HIGH-VOLTAGE NOISE USING THE ABRUPT METAL-INSULATOR TRANSITION DEVICE, AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT 有权
用于使用破坏金属绝缘体过渡装置以及包括电路的电气和/或电子系统来消除高压噪声的电路的绝缘金属绝缘体过渡装置

ABRUPT METAL-INSULATOR TRANSITION DEVICE, CIRCUIT FOR REMOVING HIGH-VOLTAGE NOISE USING THE ABRUPT METAL-INSULATOR TRANSITION DEVICE, AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT
摘要：
Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
摘要（中）：

提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声 使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

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