公开(公告)号：US08957441B2

公开(公告)日：2015-02-17

申请号：US13292045

申请日：2011-11-08

Applicant: Dong Suk Jun ,  Kwang-Yong Kang ,  Sungil Kim ,  Mun Cheol Paek ,  Han-Cheol Ryu ,  Min Hwan Kwak ,  Seung Beom Kang

Inventor： Dong Suk Jun ,  Kwang-Yong Kang ,  Sungil Kim ,  Mun Cheol Paek ,  Han-Cheol Ryu ,  Min Hwan Kwak ,  Seung Beom Kang

IPC: H01L33/58 ,  H01L33/30 ,  H01Q19/06 ,  G01J3/10 ,  G01J3/42 ,  H01Q9/28 ,  H01Q15/00 ,  H01Q15/08

CPC classification number: H01Q19/062 ,  G01J3/10 ,  G01J3/42 ,  H01Q9/285 ,  H01Q15/0086 ,  H01Q15/08

Abstract: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Abstract translation: 本发明的示例性实施例包括在基板的前表面上形成感光体薄膜; 通过图案化感光体薄膜形成感光体薄膜图案; 并在感光体薄膜图案上形成金属电极。

公开(公告)号：US20130156437A1

公开(公告)日：2013-06-20

申请号：US13618681

申请日：2012-09-14

Applicant: Sungil KIM ,  Taeyong KIM ,  Min Hwan KWAK ,  Seungbeom KANG ,  Kwang-Yong KANG

Inventor： Sungil KIM ,  Taeyong KIM ,  Min Hwan KWAK ,  Seungbeom KANG ,  Kwang-Yong KANG

IPC: H04B10/04

CPC classification number: H04B10/90

Abstract: Disclosed is a terahertz transmitter which includes a photonics oscillator configured to generate two optical signals with different wavelength and strong correlation; a modulator configured to modulate the optical signals; a pre-amplifier configured to amplify the modulated optical signals; a photomixer configured to generate a terahertz signal through photomixing of the amplified optical signals; and a post-amplifier configured to amplify the terahertz signal and to transmit the amplified terahertz signal through an antenna.

Abstract translation: 公开了一种太赫兹发射机，其包括被配置为产生具有不同波长和强相关性的两个光信号的光子振荡器; 配置为调制所述光信号的调制器; 前置放大器，被配置为放大调制的光信号; 配置为通过所述经放大的光信号的光混合产生太赫兹信号的光混合器; 以及后置放大器，被配置为放大太赫兹信号并通过天线发送放大的太赫兹信号。

公开(公告)号：US20130153757A1

公开(公告)日：2013-06-20

申请号：US13608547

申请日：2012-09-10

Applicant: Taeyong KIM ,  Sungil KIM ,  Min Hwan KWAK ,  Seungbeom KANG ,  Kwang-Yong KANG

Inventor： Taeyong KIM ,  Sungil KIM ,  Min Hwan KWAK ,  Seungbeom KANG ,  Kwang-Yong KANG

IPC: G01J1/04

CPC classification number: G02B6/122 ,  H01L31/105

Abstract: Provided is a waveguide photomixer in which an absorption layer is selectively etched to reduce a junction area. The waveguide photomixer includes a buffer layer disposed on a substrate, a first clad layer disposed on the buffer layer and formed to have smaller width than that of a top surface of the buffer layer, an absorption layer disposed on the first clad layer and formed to have smaller width than that of a top surface of the first clad layer, a second clad layer disposed on the absorption layer and formed to have greater width than that of a top surface of the absorption layer, a contact layer disposed on the second clad layer, a first electrode unit disposed on the buffer layer where the first clad layer is not disposed, and a second electrode unit disposed on the contact layer.

Abstract translation: 提供了一种波导光混合器，其中选择性地蚀刻吸收层以减少接合面积。 所述波导光混合器包括设置在基板上的缓冲层，设置在所述缓冲层上并形成为具有比所述缓冲层的顶表面小的宽度的第一覆盖层，设置在所述第一覆盖层上并形成为 具有比第一包层的顶表面宽的宽度的第二包层，设置在吸收层上并形成为具有比吸收层的顶表面宽的宽度的第二包层，设置在第二包层上的接触层 设置在不设置第一覆盖层的缓冲层上的第一电极单元和设置在接触层上的第二电极单元。

公开(公告)号：US20120162747A1

公开(公告)日：2012-06-28

申请号：US13291225

申请日：2011-11-08

Applicant: Sungil KIM ,  Kwang-Yong KANG ,  Dong Suk JUN

Inventor： Sungil KIM ,  Kwang-Yong KANG ,  Dong Suk JUN

IPC: G02F1/35

CPC classification number: G02F1/3534 ,  G02F1/2255 ,  G02F2203/13 ,  H01S3/0078

Abstract: A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.

Abstract translation: 太赫兹连续波发生器包括：光强调制器，被配置为将光信号调制成DSB光信号; 本地振荡器，被配置为产生用于将输入到所述光强度调制器的光信号调制成DSB光信号的调制信号; 陷波滤波器，被配置为滤波具有特定频率的光信号; 配置为放大所述光强调制器的输出信号的光纤放大器; 光循环器，被配置为将输入到光纤放大器的光信号发送到陷波滤波器，并将从陷波滤波器反射的光信号发射到光强度调制器的输入端; 光耦合器，被配置为将光信号施加到光强度调制器; 以及被配置为对通过陷波滤波器输出的DSB信号进行光混合的OE转换器。

公开(公告)号：US20120086096A1

公开(公告)日：2012-04-12

申请号：US13268147

申请日：2011-10-07

Applicant: Mun Cheol Paek ,  Kwang-Yong Kang ,  Min Hwan Kwak ,  Seungbeom Kang

Inventor： Mun Cheol Paek ,  Kwang-Yong Kang ,  Min Hwan Kwak ,  Seungbeom Kang

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01Q1/364 ,  G01J3/0208 ,  G01J3/0229 ,  G01J3/42 ,  H01Q15/08 ,  H01Q19/062

Abstract: Provided are a condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection and a fabricating method thereof. A condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection includes a condenser lens, a photoconductive thin film deposited on the condenser lens, and a metal electrode formed on the photoconductive thin film for a photoconductive antenna. In the antenna device, the condenser lens and the photoconductive thin film are coupled to each other.

Abstract translation: 提供一种用于太赫兹波产生和检测的聚光透镜耦合光电导天线装置及其制造方法。 用于太赫兹波产生和检测的聚光透镜耦合的光电导天线装置包括聚光透镜，沉积在聚光透镜上的光电导薄膜和形成在光电导天线的光电导薄膜上的金属电极。 在天线装置中，聚光透镜和光电导薄膜彼此耦合。

公开(公告)号：US07989792B2

公开(公告)日：2011-08-02

申请号：US12162964

申请日：2007-01-31

Applicant: Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

Inventor： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

IPC: H01L49/00

CPC classification number: H01L49/003

Abstract: An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.

Abstract translation: 提供了具有平行MIT材料层的突发MIT（金属 - 绝缘体转变）器件。 突变MIT装置包括设置在基板的某个区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及至少一个MIT材料层，电连接第一电极与第二电极 电极，并且具有允许MIT材料层的整个区域由于MIT而转变成金属层的宽度。 由于这种构造，通常由流过MIT材料层的电流引起的MIT材料层的劣化不太可能发生。

公开(公告)号：US07944360B2

公开(公告)日：2011-05-17

申请号：US12090084

申请日：2006-06-27

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Yong-Wook Lee ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Sang-Kuk Choi ,  Sun-Jin Yun

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Yong-Wook Lee ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Sang-Kuk Choi ,  Sun-Jin Yun

IPC: G08B17/00

CPC classification number: G01K3/005 ,  G01K7/22

Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

Abstract translation: 提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。 突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。 突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。 报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。 因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

公开(公告)号：US07911756B2

公开(公告)日：2011-03-22

申请号：US11908837

申请日：2006-03-07

Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Gyung-Ock Kim

Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Gyung-Ock Kim

IPC: H02H9/00

CPC classification number: H01L49/003

Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Abstract translation: 提供了一种使用突变金属 - 绝缘体转变（MIT）装置的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。 突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。 因此，可以有效地消除低电压噪声。

公开(公告)号：US07911125B2

公开(公告)日：2011-03-22

申请号：US12064948

申请日：2006-08-25

Applicant: Hyun-Tak Kim ,  Byung Gyu Chae ,  Kwang-Yong Kang ,  Yoon Ho Song

Inventor： Hyun-Tak Kim ,  Byung Gyu Chae ,  Kwang-Yong Kang ,  Yoon Ho Song

IPC: H01J1/62

CPC classification number: H01J31/127 ,  H01J1/316 ,  H01J2201/316 ,  H01J2201/3165 ,  H01J2329/0486 ,  H01J2329/0489

Abstract: An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Abstract translation: 提供具有高电子发射速率的电子发射装置和包括该装置的显示器。 电子发射器件采用突发金属 - 绝缘体转换，器件包括：板; 金属 - 绝缘体转变（MIT）材料层，设置在所述板上并与所分割的MIT材料层的彼此面对的部分分开预定的间隙; 以及连接到分割的金属 - 绝缘体转移材料层的每个部分以将电子发射到分割的金属 - 绝缘体转移材料层的部分之间的间隙的电极。

公开(公告)号：US07767501B2

公开(公告)日：2010-08-03

申请号：US11721069

申请日：2005-12-05

Applicant: Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

Inventor： Doo-Hyeb Youn ,  Hyun-Tak Kim ,  Byung-Gyu Chae ,  Sung-Lyul Maeng ,  Kwang-Yong Kang

IPC: H01L21/335

CPC classification number: H01L49/003 ,  H01L29/452

Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.

Abstract translation: 突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。 这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层 形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。