发明申请
- 专利标题： Tunable gate electrode work function material for transistor applications
- 专利标题（中）： 晶体管应用的可调栅电极功能材料
-
申请号： US11647893申请日： 2006-12-28
-
公开(公告)号： US20080157212A1公开(公告)日： 2008-07-03
- 发明人: Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
- 申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238 ; H01L21/28
摘要：
Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.