发明申请
- 专利标题： Semiconductor Device And Method For Forming Pattern In The Same
- 专利标题（中）： 半导体器件及其形成方法
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申请号： US11760090申请日： 2007-06-08
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公开(公告)号： US20080160767A1公开(公告)日： 2008-07-03
- 发明人: Keun Do Ban , Cheol Kyu Bok
- 申请人： Keun Do Ban , Cheol Kyu Bok
- 优先权： KR10-2006-0137008 20061228
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate and a second hard mask layer over the first hard mask layer, selectively etching the second hard mask layer and the first hard mask layer by using a line/space mask as an etching mask to form a second hard mask layer pattern and a first hard mask layer pattern, forming an insulating film filling the second hard mask layer pattern and the first hard mask layer pattern, selectively etching the second hard mask layer and its underlying first hard mask layer pattern by using the insulating film as an etching mask to form a fourth hard mask layer pattern overlying a third hard mask layer pattern, removing the insulating film and the fourth hard mask layer pattern, and patterning the semiconductor substrate by using the third hard mask layer pattern as an etching mask, to form a fine pattern.
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