发明申请
- 专利标题： Integrated assist features for epitaxial growth
- 专利标题（中）： 用于外延生长的集成辅助功能
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申请号： US11650697申请日： 2007-01-05
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公开(公告)号： US20080166859A1公开(公告)日： 2008-07-10
- 发明人: Omar Zia , Nigel Cave , Venkat Kolagunta , Ruiqi Tian , Edward O. Travis
- 申请人： Omar Zia , Nigel Cave , Venkat Kolagunta , Ruiqi Tian , Edward O. Travis
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for making a semiconductor device is provided which comprises (a) creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles (219); (b) creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles (229); and (c) using the first and second masks to create a semiconductor device.
公开/授权文献
- US08741743B2 Integrated assist features for epitaxial growth 公开/授权日：2014-06-03
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