Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation
    1.
    发明申请
    Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation 有权
    用于补偿的外延生长体/ SOI混合瓦的综合辅助功能

    公开(公告)号:US20080168418A1

    公开(公告)日:2008-07-10

    申请号:US11651253

    申请日:2007-01-08

    IPC分类号: G06F17/50

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and at least one epitaxial growth mask set (321, 331) from the first data set, wherein the at least one epitaxial growth mask set corresponds to tiles (305, 307) present on first (203) and second (207) distinct semiconductor surfaces; (c) reconfiguring the first trench CMP mask set to account for the at least one epitaxial growth mask set, thereby defining a second trench CMP mask set (308), wherein the second trench CMP mask set defines a set of trench CMP tiles; and (d) using the second trench CMP mask set to make a semiconductor device.

    摘要翻译: 提供一种用于制造半导体器件的方法,其包括:(a)创建限定用于沟槽化学机械抛光(CMP)工艺的第一组瓷砖(303)的第一数据集(301) (b)从第一数据集导出第一沟槽CMP掩模组(307)和至少一个外延生长掩模组(321,331),其中所述至少一个外延生长掩模组对应于存在的瓦片(305,307) 在第一(203)和第二(207)不同的半导体表面上; (c)重新配置第一沟槽CMP掩模组以考虑至少一个外延生长掩模组,由此限定第二沟槽CMP掩模组(308),其中第二沟槽CMP掩模组限定一组沟槽CMP瓦片; 和(d)使用第二沟槽CMP掩模组来制造半导体器件。

    Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation
    2.
    发明授权
    Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation 有权
    用于补偿的外延生长体/ SOI混合瓦的综合辅助功能

    公开(公告)号:US07470624B2

    公开(公告)日:2008-12-30

    申请号:US11651253

    申请日:2007-01-08

    IPC分类号: H01L21/302

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and at least one epitaxial growth mask set (321, 331) from the first data set, wherein the at least one epitaxial growth mask set corresponds to tiles (305, 307) present on first (203) and second (207) distinct semiconductor surfaces; (c) reconfiguring the first trench CMP mask set to account for the at least one epitaxial growth mask set, thereby defining a second trench CMP mask set (308), wherein the second trench CMP mask set defines a set of trench CMP tiles; and (d) using the second trench CMP mask set to make a semiconductor device.

    摘要翻译: 提供一种用于制造半导体器件的方法,其包括:(a)创建限定用于沟槽化学机械抛光(CMP)工艺的第一组瓷砖(303)的第一数据集(301) (b)从第一数据集导出第一沟槽CMP掩模组(307)和至少一个外延生长掩模组(321,331),其中所述至少一个外延生长掩模组对应于存在的瓦片(305,307) 在第一(203)和第二(207)不同的半导体表面上; (c)重新配置第一沟槽CMP掩模组以考虑至少一个外延生长掩模组,由此限定第二沟槽CMP掩模组(308),其中第二沟槽CMP掩模组限定一组沟槽CMP瓦片; 和(d)使用第二沟槽CMP掩模组来制造半导体器件。

    Integrated assist features for epitaxial growth bulk tiles with compensation
    3.
    发明申请
    Integrated assist features for epitaxial growth bulk tiles with compensation 有权
    具有补偿的外延生长块体的综合辅助功能

    公开(公告)号:US20080168417A1

    公开(公告)日:2008-07-10

    申请号:US11650254

    申请日:2007-01-04

    IPC分类号: G06F17/50

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and a first epitaxial growth mask set (309) from the first data set, wherein the first epitaxial growth mask set is derived from the first data set by removing a subset (305) of the tiles defined by the first data set and incorporating the subset of tiles into the first epitaxial growth mask set; and (c) reconfiguring the first trench CMP mask set to account for the first epitaxial growth mask set, thereby defining a second trench CMP mask set (308).

    摘要翻译: 提供一种用于制造半导体器件的方法,其包括:(a)创建限定用于沟槽化学机械抛光(CMP)工艺的第一组瓷砖(303)的第一数据集(301) (b)从第一数据组导出第一沟槽CMP掩模集(307)和第一外延生长掩模组(309),其中通过去除子集(305)从第一数据集导出第一外延生长掩模集合, 由所述第一数据集定义并且将所述瓦片的子集合合到所述第一外延生长掩模集合中的所述瓦片; 以及(c)重新配置第一沟槽CMP掩模集合以考虑第一外延生长掩模集合,从而限定第二沟槽CMP掩模集合(308)。

    Integrated assist features for epitaxial growth
    4.
    发明授权
    Integrated assist features for epitaxial growth 有权
    用于外延生长的集成辅助功能

    公开(公告)号:US08741743B2

    公开(公告)日:2014-06-03

    申请号:US11650697

    申请日:2007-01-05

    IPC分类号: H01L21/20 H01L21/762

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles (219); (b) creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles (229); and (c) using the first and second masks to create a semiconductor device.

    摘要翻译: 提供一种用于制造半导体器件的方法,其包括:(a)产生用于半导体器件中特征的外延生长的第一掩模,所述第一掩模限定一组外延片(219); (b)产生用于限定所述半导体器件的有源区的第二掩模,所述第二掩模限定一组有源瓦片(229); 和(c)使用第一和第二掩模来制造半导体器件。

    Integrated assist features for epitaxial growth bulk tiles with compensation
    5.
    发明授权
    Integrated assist features for epitaxial growth bulk tiles with compensation 有权
    具有补偿的外延生长块体的综合辅助功能

    公开(公告)号:US07565639B2

    公开(公告)日:2009-07-21

    申请号:US11650254

    申请日:2007-01-04

    IPC分类号: G06F17/50

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and a first epitaxial growth mask set (309) from the first data set, wherein the first epitaxial growth mask set is derived from the first data set by removing a subset (305) of the tiles defined by the first data set and incorporating the subset of tiles into the first epitaxial growth mask set; and (c) reconfiguring the first trench CMP mask set to account for the first epitaxial growth mask set, thereby defining a second trench CMP mask set (308).

    摘要翻译: 提供一种用于制造半导体器件的方法,其包括:(a)创建限定用于沟槽化学机械抛光(CMP)工艺的第一组瓷砖(303)的第一数据集(301) (b)从第一数据组导出第一沟槽CMP掩模集(307)和第一外延生长掩模组(309),其中通过去除子集(305)从第一数据集导出第一外延生长掩模集合, 由所述第一数据集定义并且将所述瓦片的子集合合到所述第一外延生长掩模集合中的所述瓦片; 以及(c)重新配置第一沟槽CMP掩模集合以考虑第一外延生长掩模集合,从而限定第二沟槽CMP掩模集合(308)。

    Integrated assist features for epitaxial growth
    6.
    发明申请
    Integrated assist features for epitaxial growth 有权
    用于外延生长的集成辅助功能

    公开(公告)号:US20080166859A1

    公开(公告)日:2008-07-10

    申请号:US11650697

    申请日:2007-01-05

    IPC分类号: H01L21/20

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles (219); (b) creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles (229); and (c) using the first and second masks to create a semiconductor device.

    摘要翻译: 提供一种用于制造半导体器件的方法,其包括:(a)产生用于半导体器件中特征的外延生长的第一掩模,所述第一掩模限定一组外延片(219); (b)产生用于限定所述半导体器件的有源区的第二掩模,所述第二掩模限定一组有源瓦片(229); 和(c)使用第一和第二掩模来制造半导体器件。

    Integrated assist features for epitaxial growth
    7.
    发明授权
    Integrated assist features for epitaxial growth 有权
    用于外延生长的集成辅助功能

    公开(公告)号:US08722519B2

    公开(公告)日:2014-05-13

    申请号:US13182568

    申请日:2011-07-14

    IPC分类号: H01L27/07

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.

    摘要翻译: 提供一种制造半导体器件的方法,其包括(a)创建限定多晶硅沉积工艺的一组瓦片的数据集(301); (b)从所述数据集中导出多晶硅沉积掩模组(311),其中所述多晶硅沉积掩模组包括多个多晶硅瓦(303); (c)从所述数据集中导出外延生长掩模组(321),其中所述外延生长掩模组包括多个外延片(305); 和(d)使用所述多晶硅沉积掩模组和所述外延生长掩模组来制造半导体器件(331); 其中通过使用在外延沉积掩模组中限定的瓦片图案的至少一部分的数据集中定义的瓦片图案的至少一部分,从所述数据集中导出所述外延生长掩模组。

    Integrated Assist Features for Epitaxial Growth
    8.
    发明申请
    Integrated Assist Features for Epitaxial Growth 有权
    外延生长的综合辅助特征

    公开(公告)号:US20110269300A1

    公开(公告)日:2011-11-03

    申请号:US13182568

    申请日:2011-07-14

    IPC分类号: H01L21/20 G06F17/50

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.

    摘要翻译: 提供一种制造半导体器件的方法,其包括(a)创建限定多晶硅沉积工艺的一组瓦片的数据集(301); (b)从所述数据集中导出多晶硅沉积掩模组(311),其中所述多晶硅沉积掩模组包括多个多晶硅瓦(303); (c)从所述数据集中导出外延生长掩模组(321),其中所述外延生长掩模组包括多个外延片(305); 和(d)使用所述多晶硅沉积掩模组和所述外延生长掩模组来制造半导体器件(331); 其中通过使用在外延沉积掩模组中限定的瓦片图案的至少一部分的数据集中定义的瓦片图案的至少一部分,从所述数据集中导出所述外延生长掩模组。

    Integrated assist features for epitaxial growth
    9.
    发明授权
    Integrated assist features for epitaxial growth 有权
    用于外延生长的集成辅助功能

    公开(公告)号:US08003539B2

    公开(公告)日:2011-08-23

    申请号:US11650253

    申请日:2007-01-04

    IPC分类号: H01L21/311

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.

    摘要翻译: 提供一种制造半导体器件的方法,其包括(a)创建限定多晶硅沉积工艺的一组瓦片的数据集(301); (b)从所述数据集中导出多晶硅沉积掩模组(311),其中所述多晶硅沉积掩模组包括多个多晶硅瓦(303); (c)从所述数据集中导出外延生长掩模组(321),其中所述外延生长掩模组包括多个外延片(305); 和(d)使用所述多晶硅沉积掩模组和所述外延生长掩模组来制造半导体器件(331); 其中通过使用在外延沉积掩模组中限定的瓦片图案的至少一部分的数据集中定义的瓦片图案的至少一部分,从所述数据集中导出所述外延生长掩模组。

    Integrated assist features for epitaxial growth
    10.
    发明申请
    Integrated assist features for epitaxial growth 有权
    用于外延生长的集成辅助功能

    公开(公告)号:US20080164559A1

    公开(公告)日:2008-07-10

    申请号:US11650253

    申请日:2007-01-04

    IPC分类号: H01L21/763 H01L29/02

    摘要: A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.

    摘要翻译: 提供一种制造半导体器件的方法,其包括(a)创建限定多晶硅沉积工艺的一组瓦片的数据集(301); (b)从所述数据集中导出多晶硅沉积掩模组(311),其中所述多晶硅沉积掩模组包括多个多晶硅瓦(303); (c)从所述数据集中导出外延生长掩模组(321),其中所述外延生长掩模组包括多个外延片(305); 和(d)使用所述多晶硅沉积掩模组和所述外延生长掩模组来制造半导体器件(331); 其中通过使用在外延沉积掩模组中限定的瓦片图案的至少一部分的数据集中定义的瓦片图案的至少一部分,从所述数据集中导出所述外延生长掩模组。