发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12046741申请日： 2008-03-12
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公开(公告)号： US20080169537A1公开(公告)日： 2008-07-17
- 发明人: Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
- 申请人： Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
- 优先权： JP11-19431 19990128; JP11-160539 19990608
- 主分类号： H01L23/495
- IPC分类号： H01L23/495
摘要：
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
公开/授权文献
- US07985991B2 MOSFET package 公开/授权日：2011-07-26
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