专利检索 ap:("Ryoichi KAJIWARA" OR "Masahiro Koizumi" OR "Toshiaki Morita" OR "Kazuya Takahashi" OR "Munehisa Kishimoto" OR "Shigeru Ishii" OR "Toshinori Hirashima" OR "Yasushi Takahashi" OR "Toshiyuki Hata" OR "Hiroshi Sato" OR "Keiichi Ookawa") AND inv:"Hiroshi Sato" 第 1 页

1.

发明申请
SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件

公开(公告)号：US20110298020A1

公开(公告)日：2011-12-08

申请号：US13189883

申请日：2011-07-25

申请人： Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi KAJIWARA , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/772

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

摘要翻译： 一种半导体器件，其中第一金属部件经由包含第一贵金属的第一金属体接合到半导体元件的第一电极，并且第二金属部件经由包含第二贵金属的第二金属体接合到第二电极金属。

2.

发明授权
MOSFET package 有权
标题翻译： MOSFET封装

公开(公告)号：US07985991B2

公开(公告)日：2011-07-26

申请号：US12046741

申请日：2008-03-12

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

摘要翻译： 半导体器件具有半导体衬底，其具有MOSFET，用于设置在衬底的第一主表面上的MOSFET的主电流的电极，用于控制设置在第一主表面上的MOSFET的电极，MOSFET的后平面电极设置在所述基板的第二相对表面上，以及电连接到所述后平面电极的外部连接端子，所述外部电极包含第一部分，第二部分和第三部分，所述第一部分位于所述后平面电极，第三部分位于第二主表面下方，第三部分经由第二部分连接到第一部分。

3.

发明授权
MOSFET package 失效

公开(公告)号：US07400002B2

公开(公告)日：2008-07-15

申请号：US11589847

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

4.

发明申请
Semiconductor device 失效

公开(公告)号：US20070040248A1

公开(公告)日：2007-02-22

申请号：US11589847

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

5.

发明申请
Semiconductor device 有权

公开(公告)号：US20060197196A1

公开(公告)日：2006-09-07

申请号：US11415290

申请日：2006-05-02

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

6.

发明授权
Mosfet package 失效
标题翻译： Mosfet包装

公开(公告)号：US08455986B2

公开(公告)日：2013-06-04

申请号：US13459839

申请日：2012-04-30

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

摘要翻译： 一种具有半导体芯片的半导体器件，具有第一主表面和第二相对的主表面，并且包括形成在第一主表面上的源极和栅电极的MOSFET，以及形成在第二主表面上的漏电极，第一和第二导电作为源电极和栅电极的引线端子的部件分别设置在第一主表面上，第一和第二导电部件中的每一个在平面图中与芯片重叠，密封体密封芯片和部件的第一和第二导电构件，使得第一导电构件的一部分从密封体的第一侧表面向外突出，并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出在平面图中。

7.

发明授权
Semiconductor device 失效
标题翻译：半导体器件

公开(公告)号：US08183607B2

公开(公告)日：2012-05-22

申请号：US13189883

申请日：2011-07-25

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device features a semiconductor chip including a MOSFET, a first electrode of the MOSFET disposed on an obverse surface of the chip, a second, control electrode of the MOSFET disposed on the obverse surface, a third electrode of the MOSFET disposed on a second, opposing surface of the chip, first, second, and third conductive members, each having top surface and opposing bottom surface, the first, second, and third conductive members connecting with the first, second, and third electrodes electrically, respectively, a sealing body having top and bottom surfaces and sealing parts of the first, second, and third conductive members, the first conductive member having first, second, and third contiguous portions, the first portion is positioned over the first electrode, the second is positioned between the first and second portions and the third portion is positioned under the obverse surface of the chip.

摘要翻译： 半导体器件具有包括MOSFET的半导体芯片，设置在芯片的正面上的MOSFET的第一电极，设置在正面的MOSFET的第二控制电极，设置在第二个MOSFET上的MOSFET的第三电极分别具有顶表面和相对的底表面的芯片，第一，第二和第三导电构件的相对表面，第一，第二和第三导电构件分别与第一，第二和第三电极电连接，密封本体具有第一，第二和第三导电构件的顶表面和底表面和密封部分，第一导电构件具有第一，第二和第三邻接部分，第一部分位于第一电极上方，第二部分位于第第一和第二部分，并且第三部分位于芯片的正面下方。

8.

发明申请
Semiconductor device 审中-公开

公开(公告)号：US20070040250A1

公开(公告)日：2007-02-22

申请号：US11589895

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

9.

发明授权
MOSFET package 失效

公开(公告)号：US07394146B2

公开(公告)日：2008-07-01

申请号：US11589849

申请日：2006-10-31

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L23/495 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

10.

发明授权
MOSFET package 有权

公开(公告)号：US07332757B2

公开(公告)日：2008-02-19

申请号：US11415291

申请日：2006-05-02

申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa

IPC分类号： H01L29/94 , H01L21/00 , H01R9/00

CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012

摘要： A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

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