发明申请
- 专利标题： SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 固态成像装置及其制造方法
-
申请号： US11952755申请日： 2007-12-07
-
公开(公告)号： US20080173905A1公开(公告)日： 2008-07-24
- 发明人: Masanori NAGASE , Jiro Matsuda , Tsuneo Sasamoto , Toshiaki Hayakawa
- 申请人： Masanori NAGASE , Jiro Matsuda , Tsuneo Sasamoto , Toshiaki Hayakawa
- 优先权： JPP2006-339811 20061218
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L31/18
摘要：
A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.