摘要:
A solid-state imaging device is provided. A horizontal transfer section in the solid-image device is divided into at least three blocks each including a horizontal transfer path transferring electric charge, which is transferred through vertical transfer paths, in a row direction perpendicular to the column direction. The at least three blocks includes an intermediate block other than the blocks at each end in the row direction of horizontal transfer section, an output portion corresponding to the intermediate block is connected to first end portion of the last stage of storage areas in the intermediate block, the first end portion being placed opposite to a second end portion facing to the vertical transfer paths in the column direction of the last stage of the storages areas.
摘要:
A negative silver halide photographic emulsion comprising silver halide grains dispersed in a binder, the silver halide grains having the ratio of diameter to thickness of 5.0 or less, the grains further having an internal portion corresponding to half the volume of the silver halide grains and a surface portion corresponding to half the volume of the silver halide grains, wherein the average iodine content in the internal portion is less than 1 mol %, and wherein the average iodine content in the surface portion of the grains is 1 to 4 mol % higher than the average iodine content of the internal portion of the grains.
摘要:
A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.
摘要:
A negative-tupe silver halide photographic material is provided, having high sensitivity and good graininess with low fog. The material has at least one silver halide emulsion layer on a support, wherein chemically-sensitized silver halide grains contained in the emulsion of said emulsion layer comprise normal crystalline grains, and said emulsion layer containing said normal crystalline silver halide grains contains a polymer having a repeating unit represented by formula (I): ##STR1## wherein R.sub.1 represents a hydrogen atom or an alkyl group; Q represents one group selected from formulae (i), (ii), (iii), and (iv); ##STR2## wherein q is an integer of from 2 to 4; ##STR3## wherein R.sup.2 and R.sup.3 each represents a hydrogen atom or an alkyl group; ##STR4## wherein Z.sup.1 represents an atomic group forming a lactam ring, an oxazolidone ring, or a pyridone ring;A represents a single bond, ##STR5## B represents --O-- or ##STR6## wherein R.sup.4 represents a hydrogen atom or an alkyl group; and l is an integer of from 1 to 6; and ##STR7## wherein a has the same meaning as defined for formula (iii);D represents a single bond, --O-- or ##STR8## wherein R.sup.5 represents a hydrogen atom, an alkyl group, or ##STR9## wherein R.sup.6 represents an alkyl group; andm and n each represents an integer of from 1 to 6, provided that the sum of m and n is an integer of from 4 to 7.
摘要:
A silver halide photographic emulsion and a method for production thereof are described, said emulsion comprising silver halide grains which are comprised of silver iodobromide and have a multilayer structure formed from a core and at least one covering layer and an aspect ratio below 5, said silver halide grains being chemically sensitized and having a halogen composition such that the difference in average iodide content beween adjacent layers, each of which has a substantially homogeneous iodide distribution, is not less than 10 mol %, and the iodide content in the outermost layer is not more than 40 mol %.
摘要:
A silver halide emulsion containing negative working silver halide grains each comprising a core of silver bromide or silver bromoiodide, a first coating layer exterior the core of silver iodide or silver bromoiodide, and a second coating layer exterior the first coating layer composed of silver bromide or silver bromoiodide different from that of the first coating layer in halide composition, and having a projected area diameter-to-thickness ratio of less than 5, in which:(1) the first coating layer contains more iodide than the core by 10 mol % or more; and(2) silver in the first coating layer accounts for 0.01 to 30 mol % of the total silver in the grain.
摘要:
A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.
摘要:
A pixel section is divided into a plurality of segment regions 10a, 10b, 10c, and 10d along one direction. The plurality of segment regions are formed so that signal charges generated from the respective segment regions are converted into image data in accordance with predetermined conversion conditions, segment regions at least partially overlaps each other along a direction perpendicular to the one direction. Pixels signals output from the overlapping portions R1, R2, and R3 are compared with each other. The pixel signals are corrected so that offset differences between the overlapping portions and gain ratio between the overlapping portions, which are caused when the signal charges are converted into the pixel signals, are equal to each other.
摘要:
Transmission and reception nodes are connected to a communication network to be controlled with respect to time according to bus time as time information shared therebetween. The transmission node periodically transmits data while keeping a predetermined free period of time. The reception node decides normality of data received. At detection of abnormality in reception, the reception node transmits during the free period of time a re-transmission request signal to the transmission node with specification of information identifying the bus time of the abnormal data reception. On receiving the re-transmission request signal, the transmission node obtains the data transmitted at the bus time identified by the information specified by the re-transmission request signal and then re-transmits the data during the free period of time to the reception node.