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发明申请
US20080174025A1 Semiconductor chip structure, method of manufacturing the semiconductor chip structure, semiconductor chip package, and method of manufacturing the semiconductor chip package 有权
半导体芯片结构，半导体芯片结构的制造方法，半导体芯片封装以及半导体芯片封装的制造方法

Semiconductor chip structure, method of manufacturing the semiconductor chip structure, semiconductor chip package, and method of manufacturing the semiconductor chip package
摘要：
A semiconductor chip structure may include a semiconductor chip, a first insulation layer and a redistribution layer. The first insulation layer may be formed on the semiconductor chip. The first insulation layer may have at least one first groove formed at an upper surface portion of the first insulation layer. Further, the at least one first groove may have an upper width and a lower width greater than the upper width. The redistribution layer may be partially formed on the first insulation layer. The redistribution layer may have at least one first protrusion formed on a lower surface portion of the redistribution layer. The first protrusion may have an upper width and a lower width less than the upper width. The first protrusion may be inserted into the at least one first groove.
摘要（中）：

半导体芯片结构可以包括半导体芯片，第一绝缘层和再分配层。 第一绝缘层可以形成在半导体芯片上。 第一绝缘层可以具有形成在第一绝缘层的上表面部分处的至少一个第一凹槽。 此外，所述至少一个第一凹槽可以具有大于上宽度的上宽度和下宽度。 再分布层可以部分地形成在第一绝缘层上。 再分配层可以具有形成在再分布层的下表面部分上的至少一个第一突起。 第一突起可以具有小于上宽度的上宽度和下宽度。 第一突起可插入至少一个第一凹槽中。

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