发明申请
- 专利标题： FORMING METHOD AND STRUCTURE OF POROUS LOW-K LAYER, INTERCONNECT PROCESS AND INTERCONNECT STRUCTURE
- 专利标题（中）： 多孔低K层的形成方法和结构，互连过程和互连结构
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申请号： US11672307申请日： 2007-02-07
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公开(公告)号： US20080188088A1公开(公告)日： 2008-08-07
- 发明人: Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- 申请人： Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- 申请人地址： TW Hsinchu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.
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