发明申请
US20080191192A1 Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
有权
Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管
- 专利标题： Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
- 专利标题（中）： Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管
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申请号： US12030117申请日： 2008-02-12
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公开(公告)号： US20080191192A1公开(公告)日： 2008-08-14
- 发明人: Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
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