公开(公告)号：US20080191192A1

公开(公告)日：2008-08-14

申请号：US12030117

申请日：2008-02-12

申请人： Daniel F. Feezell ,  Matthew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Matthew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US09040327B2

公开(公告)日：2015-05-26

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/02 ,  H01L33/06 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US20120256158A1

公开(公告)日：2012-10-11

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/04

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US08211723B2

公开(公告)日：2012-07-03

申请号：US12030117

申请日：2008-02-12

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US20080198881A1

公开(公告)日：2008-08-21

申请号：US12030124

申请日：2008-02-12

申请人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S5/06

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

公开(公告)号：US20110032965A1

公开(公告)日：2011-02-10

申请号：US12908463

申请日：2010-10-20

申请人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S5/20 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

公开(公告)号：US07839903B2

公开(公告)日：2010-11-23

申请号：US12030124

申请日：2008-02-12

申请人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S3/10

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

公开(公告)号：US08588260B2

公开(公告)日：2013-11-19

申请号：US12908463

申请日：2010-10-20

申请人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Stephen P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Stephen P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S3/10

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

公开(公告)号：US20100219416A1

公开(公告)日：2010-09-02

申请号：US12716176

申请日：2010-03-02

申请人： Robert M. Farrell ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02609 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/005 ,  H01L33/007 ,  H01L33/18 ,  H01L33/32 ,  H01S5/343 ,  Y10T428/31

摘要： A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.

摘要翻译： （Ga，Al，In，B）N薄膜中的（Ga，Al，In，B）N薄膜的生长形态的改进方法，其中，（Ga，Al，In，B） 直接在非极性或半极性（Ga，Al，In，B）N底物或模板上生长，并且在生长期间使用的载体气体的一部分由惰性气体组成。 可以在由本发明生长的光滑（Ga，Al，In，B）N薄膜上生长非极性或半极性氮化物LED和二极管激光器。

公开(公告)号：US20120180868A1

公开(公告)日：2012-07-19

申请号：US13279131

申请日：2011-10-21

申请人： Robert M. Farrell ,  Carl J. Neufeld ,  Nikholas G. Toledo ,  Steven P. DenBaars ,  Umesh K. Mishra ,  James S. Speck ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Carl J. Neufeld ,  Nikholas G. Toledo ,  Steven P. DenBaars ,  Umesh K. Mishra ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts.

摘要翻译： 用于制造III族氮化物光伏器件的III族氮化物光伏器件结构和方法，其增加了III族氮化物光伏器件的光收集效率。 III族氮化物光伏器件包括一个或多个III族氮化物器件层，并且III族氮化物光伏器件通过收集入射在III族氮化物器件层的背面上的光而起作用。 III族氮化物器件层在衬底上生长，其中当除去衬底时，III族氮化物器件层被暴露，然后有意地暴露暴露的III族氮化物器件层以增强它们的光收集效率。 通过设备背面的入射光的收集简化了器件中多个结的制造。 III族氮化物光伏器件可以包括格栅状触点，透明或半透明触点或反射触点。