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1.发明申请Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 有权Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管公开(公告)号：US20080191192A1
公开(公告)日：2008-08-14
申请号：US12030117
申请日：2008-02-12
申请人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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2.发明申请Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 审中-公开Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管公开(公告)号：US20120256158A1
公开(公告)日：2012-10-11
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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3.发明申请OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS 有权激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化公开(公告)号：US20080198881A1
公开(公告)日：2008-08-21
申请号：US12030124
申请日：2008-02-12
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S5/06
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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4.发明申请OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS 有权激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化公开(公告)号：US20110032965A1
公开(公告)日：2011-02-10
申请号：US12908463
申请日：2010-10-20
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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5.发明授权Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers 有权非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化公开(公告)号：US08588260B2
公开(公告)日：2013-11-19
申请号：US12908463
申请日：2010-10-20
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Stephen P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Stephen P. DenBaars , Shuji Nakamura
IPC分类号： H01S3/10
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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6.发明授权Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices 有权金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件公开(公告)号：US08178373B2
公开(公告)日：2012-05-15
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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7.发明申请METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES 有权金属化学气相沉积（MOCVD）高性能非极性III-NITRIDE光学器件的生长公开(公告)号：US20110037052A1
公开(公告)日：2011-02-17
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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公开(公告)号：US20080179607A1
公开(公告)日：2008-07-31
申请号：US12001227
申请日：2007-12-11
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/2201 , H01S5/2231 , H01S5/3404 , H01S5/34333
摘要： An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
摘要翻译： 一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。 因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。
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9.发明申请Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices 有权金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件公开(公告)号：US20080164489A1
公开(公告)日：2008-07-10
申请号：US12001286
申请日：2007-12-11
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。
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10.发明申请CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES 审中-公开（Al，In，Ga，B）N在各种基材上的M-PLANE和SEM图像的晶体生长公开(公告)号：US20080163814A1
公开(公告)日：2008-07-10
申请号：US11954172
申请日：2007-12-11
申请人： Kwang Choong Kim , Mathew C. Schmidt , Feng Wu , Asako Hirai , Melvin B. McLaurin , Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Kwang Choong Kim , Mathew C. Schmidt , Feng Wu , Asako Hirai , Melvin B. McLaurin , Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： C30B23/04
CPC分类号： C30B25/04 , C30B29/403 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007
摘要： A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
摘要翻译： 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在电介质掩模上横向生长，直到实现完全聚结的连续膜。
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