发明申请
- 专利标题: METHOD FOR DETERMINING LITHOGRAPHIC FOCUS AND EXPOSURE
- 专利标题(中): 用于确定光刻焦点和曝光的方法
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申请号: US12101757申请日: 2008-04-11
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公开(公告)号: US20080192221A1公开(公告)日: 2008-08-14
- 发明人: Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
- 申请人: Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
- 申请人地址: US CA Milpitas
- 专利权人: KLA-Tencor Technologies Corporation
- 当前专利权人: KLA-Tencor Technologies Corporation
- 当前专利权人地址: US CA Milpitas
- 主分类号: G03B27/52
- IPC分类号: G03B27/52 ; G01J3/00
摘要:
A method for determining one or more process parameter settings of a photolithographic system is disclosed.
公开/授权文献
- US07656512B2 Method for determining lithographic focus and exposure 公开/授权日:2010-02-02