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公开(公告)号：US07933016B2
公开(公告)日：2011-04-26
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译： 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 提供多个目标。 每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。 用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。 使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度 （ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii） 使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。
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2.发明申请公开(公告)号：US20100091284A1
公开(公告)日：2010-04-15
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译： 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 提供多个目标。 每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。 用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。 使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度 （ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii） 使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。
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3.发明授权Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology 有权使用光学关键尺寸（OCD）计量优化用于结构分析的光学参数模型公开(公告)号：US09310296B2
公开(公告)日：2016-04-12
申请号：US13164398
申请日：2011-06-20
CPC分类号： G01B11/24 , G01B2210/56 , G01N21/47 , G01N21/956 , G01N2021/95615 , G03F7/70625 , G06F17/5009
摘要： Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.
摘要翻译： 描述了使用光学关键尺寸度量结构分析的光学参数模型的优化。 一种方法包括确定适合结构参数的第一光学模型。 第一个光学模型拟合是基于结构的第一个模型的数量域。 对于第一量的量域确定第一近场光响应，并且针对量的第二个不同数量的量确定第二近场光响应。 比较第一和第二近场光响应，以定位用于结构参数的高光场强度的公共区域。 该结构的第一个模型被修改以提供第二个不同的结构模型。 基于结构的第二个模型，确定结构参数的第二个不同的光学模型拟合。
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公开(公告)号：US07663753B2
公开(公告)日：2010-02-16
申请号：US11963730
申请日：2007-12-21
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Ken Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Ken Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb; target C is designed to have an offset Xc; and target D is designed to have an offset Xd. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译： 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计为具有偏移Xb; 目标C被设计为具有偏移Xc; 并且目标D被设计为具有偏移量Xd。 偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。 目标A，B，C和D用电磁辐射照射，分别从目标A，B，C和D获得光谱SA，SB，SC和SD。 然后使用基于获得的光谱SA，SB，SC和SD的线性近似来确定第一结构和第二结构之间的任何覆盖误差。
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公开(公告)号：US20080192221A1
公开(公告)日：2008-08-14
申请号：US12101757
申请日：2008-04-11
申请人： Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
发明人： Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A method for determining one or more process parameter settings of a photolithographic system is disclosed.
摘要翻译： 公开了一种用于确定光刻系统的一个或多个工艺参数设置的方法。
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6.发明申请METHOD OF OPTIMIZING AN OPTICAL PARAMETRIC MODEL FOR STRUCTURAL ANALYSIS USING OPTICAL CRITICAL DIMENSION (OCD) METROLOGY 有权使用光学关键尺寸（OCD）方法优化结构分析的光学参数模型的方法公开(公告)号：US20120323356A1
公开(公告)日：2012-12-20
申请号：US13164398
申请日：2011-06-20
CPC分类号： G01B11/24 , G01B2210/56 , G01N21/47 , G01N21/956 , G01N2021/95615 , G03F7/70625 , G06F17/5009
摘要： Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.
摘要翻译： 描述了使用光学关键尺寸度量结构分析的光学参数模型的优化。 一种方法包括确定适合结构参数的第一光学模型。 第一个光学模型拟合是基于结构的第一个模型的数量域。 对于第一量的量域确定第一近场光响应，并且针对量的第二个不同数量的量确定第二近场光响应。 比较第一和第二近场光响应，以定位用于结构参数的高光场强度的公共区域。 该结构的第一个模型被修改以提供第二个不同的结构模型。 基于结构的第二个模型，确定结构参数的第二个不同的光学模型拟合。
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公开(公告)号：US08090558B1
公开(公告)日：2012-01-03
申请号：US12477459
申请日：2009-06-03
申请人： Thaddeus G. Dziura
发明人： Thaddeus G. Dziura
CPC分类号： G01N21/55 , G01B11/0616 , G01B2210/56 , G01N2021/8438 , G03F7/70625
摘要： A method is presented for selecting the order in which parameters are evaluated for inclusion in a model of a film stack, which is by ranking them according to measurement precision. Further, a method is presented for determining which parameters are to be floated, set, or discarded from the model, which is by determining whether average chi-square and chi-square uniformity decreases or increases when the parameter is added to the model. In this manner, a model for the film stack can be quickly assembles with a high degree of accuracy.
摘要翻译： 提出了一种用于选择参数被评估以包括在胶片堆叠的模型中的顺序的方法，其通过根据测量精度对它们进行排名。 此外，提出了一种用于确定要从模型中浮动，设置或丢弃哪些参数的方法，其通过当将参数添加到模型时确定平均卡方和卡方均匀性是否减小或增加。 以这种方式，可以以高精确度快速地组装用于胶片堆叠的模型。
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公开(公告)号：US07317531B2
公开(公告)日：2008-01-08
申请号：US10729838
申请日：2003-12-05
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译： 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。 目标A，B，C和D用电磁辐射照射，以获得光谱S A，B，C，S和S， 分别来自目标A，B，C和D的SUB> D
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公开(公告)号：US10325004B1
公开(公告)日：2019-06-18
申请号：US15058826
申请日：2016-03-02
IPC分类号： H01L21/66 , G01R31/26 , G01B11/14 , G01B11/27 , G06F17/11 , G01N21/47 , G01N21/956 , G01B11/06 , G06F17/50
摘要： Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.
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公开(公告)号：US07656512B2
公开(公告)日：2010-02-02
申请号：US12101757
申请日：2008-04-11
申请人： Walter D. Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
发明人： Walter D. Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A method for determining one or more process parameter settings of a photolithographic system is disclosed.
摘要翻译： 公开了一种用于确定光刻系统的一个或多个工艺参数设置的方法。
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