A high-efficiency power semiconductor rectifier device (10) comprising a δP++ layer (12), a P-body (14), an N-drift region (16), an N+ substrate (18), an anode (20), and a cathode (22). The method of fabricating the device (10) comprises the steps of depositing the N-drift region (16) on the N+ substrate (18), implanting boron into the N-drift region (16) to create a P-body region (14), forming a layer of titanium silicide (56) on the P-body region (14), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide (56) and the P-body region (14) to create the δP++ layer (12) of supersaturated P-doped silicon.