发明申请
- 专利标题： HIGH-DIELECTRIC CONSTANT THIN FILM METAL OXIDES ON SILICON WAFERS FOR CAPACITOR APPLICATIONS AND METHODS OF MANUFACTURE
- 专利标题（中）： 用于电容器应用的硅离子上的高介电薄膜金属氧化物及其制造方法
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申请号： US12043309申请日： 2008-03-06
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公开(公告)号： US20080220153A1公开(公告)日： 2008-09-11
- 发明人: Shyama P. Mukherjee , Mark L.F. Phillips , Travis P.S. Thoms
- 申请人： Shyama P. Mukherjee , Mark L.F. Phillips , Travis P.S. Thoms
- 主分类号： B05D5/12
- IPC分类号： B05D5/12
摘要：
A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
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