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1.发明申请HIGH-DIELECTRIC CONSTANT THIN FILM METAL OXIDES ON SILICON WAFERS FOR CAPACITOR APPLICATIONS AND METHODS OF MANUFACTURE 有权用于电容器应用的硅离子上的高介电薄膜金属氧化物及其制造方法公开(公告)号：US20080220153A1
公开(公告)日：2008-09-11
申请号：US12043309
申请日：2008-03-06
IPC分类号： B05D5/12
CPC分类号： H01L28/40 , H01G4/10 , H01G4/33 , H01L21/316 , H01L21/31691 , H01L28/55 , Y10T29/43
摘要： A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
摘要翻译： 一种利用有机模板法合成的有序介孔金属氧化物薄膜在低温下制造高k正电介质金属氧化物薄膜的方法。 该方法包括（a）含有高k金属氧化物膜的定期有序中孔结构的化学溶液沉积，（b）去除有机模板添加剂，（c）适当的第二相渗透孔，和（d）低 渗透膜的温度热和/或退火。
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2.发明授权High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture 有权用于电容器应用的硅晶片上的高介电常数薄膜金属氧化物和制造方法公开(公告)号：US08481106B2
公开(公告)日：2013-07-09
申请号：US12043309
申请日：2008-03-06
CPC分类号： H01L28/40 , H01G4/10 , H01G4/33 , H01L21/316 , H01L21/31691 , H01L28/55 , Y10T29/43
摘要： A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
摘要翻译： 一种利用有机模板法合成的有序介孔金属氧化物薄膜在低温下制造高k正电介质金属氧化物薄膜的方法。 该方法包括（a）含有高k金属氧化物膜的定期有序中孔结构的化学溶液沉积，（b）去除有机模板添加剂，（c）适当的第二相渗透孔，和（d）低 渗透膜的温度热和/或退火。
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公开(公告)号：US07011889B2
公开(公告)日：2006-03-14
申请号：US10078919
申请日：2002-02-19
申请人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
发明人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
IPC分类号： B32B9/04
CPC分类号： C08G77/04 , C08G77/12 , G03F7/0751 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , Y10T428/265 , Y10T428/31663
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.
摘要翻译： 本发明提供了包含至少80重量％的式I的有机硅氧烷：[Y 0.01-1.0 SiO 2 1.5-2] 0.01-1.0 SiO <1.5-2 其中Y是芳基; Z是烯基; a是一级方程式的15％至70％; b是式I的2％至50％; 并且c为式I的20％至80％。本发明的组合物可用于半导体器件，并且可有利地用作蚀刻停止层。
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公开(公告)号：US06406814B1
公开(公告)日：2002-06-18
申请号：US09703348
申请日：2000-10-31
申请人： Alexander Gorkovenko , Terje A. Skotheim , Zhe-Sheng Xu , Leonid I. Boguslavsky , Zhongyi Deng , Shyama P. Mukherjee
发明人： Alexander Gorkovenko , Terje A. Skotheim , Zhe-Sheng Xu , Leonid I. Boguslavsky , Zhongyi Deng , Shyama P. Mukherjee
IPC分类号： H01M404
CPC分类号： H01M4/136 , H01M4/0485 , H01M4/137 , H01M4/36 , H01M4/40 , H01M4/581 , H01M4/5815 , H01M4/583 , H01M4/587 , H01M4/60 , H01M4/602 , H01M4/62 , H01M4/622 , H01M4/623 , H01M4/624 , H01M10/052 , H01M10/3909 , H01M2004/027 , H01M2004/028 , Y10S977/753 , Y10S977/948 , Y10T29/49108
摘要： The present invention pertains to solid composite cathodes which comprise (a) an electroactive sulfur-containing cathode material which, in its oxidized state, comprises a polysulfide moiety of the formula, —Sm—, wherein m is an integer from 3 to 10; and (b) a non-electroactive particulate material having a strong adsorption of soluble polysulfides. The present invention also pertains to electric current producing cells comprising such solid composite cathodes, and methods of making such solid composite cathodes and electric current producing cells.
摘要翻译： 本发明涉及固体复合阴极，其包含（a）电活性含硫阴极材料，其在其氧化态中包含下式的多硫化物部分-Sm-，其中m为3至10的整数; 和（b）具有强吸附可溶性多硫化物的非电活性颗粒材料。 本发明还涉及包含这种固体复合阴极的电流产生电池，以及制备这种固体复合阴极和电流产生电池的方法。
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5.发明授权Composite cathodes, electrochemical cells comprising novel composite cathodes, and processes for fabricating same 失效复合阴极，包含新型复合阴极的电化学电池及其制造方法
公开(公告)号：US5919587A
公开(公告)日：1999-07-06
申请号：US859996
申请日：1997-05-21
IPC分类号： C01B31/02 , H01B1/12 , H01M4/02 , H01M4/04 , H01M4/13 , H01M4/131 , H01M4/136 , H01M4/137 , H01M4/139 , H01M4/1397 , H01M4/36 , H01M4/38 , H01M4/48 , H01M4/485 , H01M4/58 , H01M4/587 , H01M4/60 , H01M4/62 , H01M6/16 , H01M6/40 , H01M10/05 , H01M10/052 , H01M10/0525 , H01M10/054 , H01M10/0569 , H01M10/0587 , H01M10/36 , H01M10/42
CPC分类号： H01M4/60 , H01B1/12 , H01M10/05 , H01M10/052 , H01M10/0569 , H01M4/0404 , H01M4/13 , H01M4/131 , H01M4/136 , H01M4/1397 , H01M4/36 , H01M4/362 , H01M4/364 , H01M4/366 , H01M4/48 , H01M4/581 , H01M4/5815 , H01M4/602 , H01M4/622 , H01M10/0525 , H01M10/054 , H01M10/0587 , H01M2004/021 , H01M2004/028 , H01M2010/4292 , H01M2300/0025 , H01M2300/0082 , H01M2300/0085 , H01M4/04 , H01M4/137 , H01M4/139 , H01M4/38 , H01M4/40 , H01M4/405 , H01M4/485 , H01M4/5825 , H01M4/587 , H01M4/62 , H01M6/166 , H01M6/40 , Y02P70/54 , Y10S977/948
摘要： The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula --S.sub.m --, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula M.sub.j Y.sub.k (OR).sub.l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is a number ranging from 0 to 72; and l is a number ranging from 0 to 72; with the proviso that k and l cannot both be 0. The present invention also pertains to methods of making such composite cathodes, cells comprising such composite cathodes, and methods of making such cells.
摘要翻译： 本发明涉及适用于电化学电池的复合阴极，所述阴极包括：（a）电活性含硫阴极材料，其中所述电活性含硫阴极材料处于其氧化态，包含 式-Sm-，其中m是等于或大于3的整数; 和（b）电活性过渡金属硫族化物组合物，其包封所述电活性含硫阴极材料，并延迟所述电活性含硫阴极材料的阴离子还原产物的输送，所述电活性过渡金属硫族化物组合物包含电活性转变 金属硫族化物，具有式Mj Yk（OR）l其中：M是过渡金属; Y在每次出现时相同或不同，为氧，硫或硒; R是有机基团，每次出现时相同或不同; j为1〜12的整数， k是从0到72的数字; l为0〜72的数; 条件是k和l不能都为0.本发明还涉及制备这种复合阴极的方法，包含这种复合阴极的电池，以及制造这种电池的方法。
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6.发明授权公开(公告)号：US06630433B2
公开(公告)日：2003-10-07
申请号：US09745266
申请日：2000-12-20
IPC分类号： C11D708
CPC分类号： C09G1/02 , C23F1/18 , C23F3/04 , C23F3/06 , H01L21/32115 , H01L21/3212 , H01L21/32134
摘要： Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
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7.发明授权Cathodes comprising electroactive sulfur materials and secondary batteries using same 失效包含电活性硫材料的阴极和使用其的二次电池公开(公告)号：US06210831B1
公开(公告)日：2001-04-03
申请号：US08994708
申请日：1997-12-19
申请人： Alexander Gorkovenko , Terje A. Skotheim , Zhe-Sheng Xu , Leonid I. Boguslavsky , Zhongyi Deng , Shyama P. Mukherjee
发明人： Alexander Gorkovenko , Terje A. Skotheim , Zhe-Sheng Xu , Leonid I. Boguslavsky , Zhongyi Deng , Shyama P. Mukherjee
IPC分类号： H01M458
CPC分类号： H01M4/136 , H01M4/0485 , H01M4/137 , H01M4/36 , H01M4/40 , H01M4/581 , H01M4/5815 , H01M4/583 , H01M4/587 , H01M4/60 , H01M4/602 , H01M4/62 , H01M4/622 , H01M4/623 , H01M4/624 , H01M10/052 , H01M10/3909 , H01M2004/027 , H01M2004/028 , Y10S977/753 , Y10S977/948 , Y10T29/49108
摘要： The present invention pertains to solid composite cathodes which comprise (a) an electroactive sulfur-containing cathode material which, in its oxidized state, comprises a polysulfide moiety of the formula, —Sm—, wherein m is an integer from 3 to 10; and (b) a non-electroactive particulate non-fibrous material having a strong adsorption of soluble polysulfides. The present invention also pertains to electric current producing cells comprising such solid composite cathodes, and methods of making such solid composite cathodes and electric current producing cells.
摘要翻译： 本发明涉及固体复合阴极，其包含（a）电活性含硫阴极材料，其在其氧化态中包含下式的多硫化物部分-Sm-，其中m为3至10的整数; 和（b）具有很强吸附可溶性多硫化物的非电活性微粒非纤维材料。 本发明还涉及包含这种固体复合阴极的电流产生电池，以及制备这种固体复合阴极和电流产生电池的方法。
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8.发明授权Method for fabricating a low thermal expansion coefficient glass fiber-reinforced polymer matrix composite substrate and composite substrate 失效制造低热膨胀系数玻璃纤维增强聚合物基体复合基板和复合基板的方法
公开(公告)号：US5120339A
公开(公告)日：1992-06-09
申请号：US680363
申请日：1991-04-04
CPC分类号： C03C25/26 , C03C25/42 , H05K3/022 , Y10S65/901 , Y10T442/2992
摘要： A composite substrate is fabricated by applying to a glass fiber substrate a liquid sol-gel composition and then sintering the sol-gel to convert it to the glass phase. A polymeric coating is then applied.
摘要翻译： 通过向玻璃纤维基材施加液体溶胶 - 凝胶组合物，然后烧结溶胶 - 凝胶以将其转化为玻璃相来制造复合基材。 然后施加聚合物涂层。
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9.发明授权Composite cathodes, electrochemical cells comprising novel composite cathodes, and processes for fabricating same 有权复合阴极，包含新型复合阴极的电化学电池及其制造方法公开(公告)号：US07790315B2
公开(公告)日：2010-09-07
申请号：US11331470
申请日：2006-01-13
CPC分类号： H01M4/60 , H01B1/12 , H01M4/04 , H01M4/0404 , H01M4/13 , H01M4/131 , H01M4/136 , H01M4/137 , H01M4/139 , H01M4/1397 , H01M4/36 , H01M4/362 , H01M4/364 , H01M4/366 , H01M4/38 , H01M4/40 , H01M4/405 , H01M4/48 , H01M4/485 , H01M4/581 , H01M4/5815 , H01M4/5825 , H01M4/587 , H01M4/602 , H01M4/62 , H01M4/622 , H01M6/166 , H01M6/40 , H01M10/05 , H01M10/052 , H01M10/0525 , H01M10/054 , H01M10/0569 , H01M10/0587 , H01M2004/021 , H01M2004/028 , H01M2010/4292 , H01M2300/0025 , H01M2300/0082 , H01M2300/0085 , Y10S977/948
摘要： The present invention pertains to composite cathodes suitable for use in an electrochemical cell, said cathodes comprising: (a) an electroactive sulfur-containing cathode material, wherein said electroactive sulfur-containing cathode material, in its oxidized state, comprises a polysulfide moiety of the formula —Sm—, wherein m is an integer equal to or greater than 3; and, (b) an electroactive transition metal chalcogenide composition, which encapsulates said electroactive sulfur-containing cathode material, and which retards the transport of anionic reduction products of said electroactive sulfur-containing cathode material, said electroactive transition metal chalcogenide composition comprising an electroactive transition metal chalcogenide having the formula MjYk(OR)l wherein: M is a transition metal; Y is the same or different at each occurrence and is oxygen, sulfur, or selenium; R is an organic group and is the same or different at each occurrence; j is an integer ranging from 1 to 12; k is a number ranging from 0 to 72; and l is a number ranging from 0 to 72; with the proviso that k and l cannot both be 0. The present invention also pertains to methods of making such composite cathodes, cells comprising such composite cathodes, and methods of making such cells.
摘要翻译： 本发明涉及适用于电化学电池的复合阴极，所述阴极包括：（a）电活性含硫阴极材料，其中所述电活性含硫阴极材料处于其氧化态，包含 式-Sm-，其中m是等于或大于3的整数; 和（b）电活性过渡金属硫族化物组合物，其包封所述电活性含硫阴极材料，并延迟所述电活性含硫阴极材料的阴离子还原产物的输送，所述电活性过渡金属硫族化物组合物包含电活性转变 金属硫属化物，具有式MjYk（OR）l其中：M是过渡金属; Y在每次出现时相同或不同，为氧，硫或硒; R是有机基团，每次出现时相同或不同; j为1〜12的整数， k是从0到72的数字; l为0〜72的数; 条件是k和l不能都为0.本发明还涉及制备这种复合阴极的方法，包含这种复合阴极的电池，以及制造这种电池的方法。
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公开(公告)号：US06787198B2
公开(公告)日：2004-09-07
申请号：US10280270
申请日：2002-10-23
IPC分类号： C23C1404
CPC分类号： C23C18/1233 , C01G11/02 , C23C2/04 , C23C2/26 , C23C8/02 , C23C18/06 , C23C18/08 , C23C18/1216 , C23C18/14 , C23C24/08 , C23C26/00 , C23C26/02 , C23C30/00 , G03F7/0047 , H01L21/02186 , H01L21/02197 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02356 , H01L21/31695 , H05K1/162 , H05K3/105
摘要： The present invention involves the hydrothermal treatment of nanostructured films to form high k PMOD™ films for use in applications that are temperature sensitive, such as applications using a polymer based substrate. After a PMOD™ precursor is deposited and converted on a substrate, and possibly after other process steps, the amorphous, nanoporous directly patterned film is subjected to low temperature hydrothermal treatment to densify and possibly crystallize the resulting high dielectric PMOD™ film. A post hydrothermal treatment bake is then performed to remove adsorped water.
摘要翻译： 本发明涉及纳米结构膜的水热处理以形成用于温度敏感的应用的高k PMOD TM膜，例如使用基于聚合物的基底的应用。 在PMOD TM前体沉积并转化在基底上，并且可能在其它工艺步骤之后，将无定形纳米多孔直接图案化的膜进行低温水热处理以致密化并且可能结晶所得的高介电PMOD TM膜 。 然后进行后水热处理烘烤以除去吸附的水。
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