发明申请
- 专利标题： METHODS OF FORMING A PHASE-CHANGE MATERIAL LAYER INCLUDING TELLURIUM AND METHODS OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME
- 专利标题（中）： 形成相变材料层的方法及其制造方法使用该方法的相变存储器件
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申请号： US12051043申请日： 2008-03-19
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公开(公告)号： US20080230373A1公开(公告)日： 2008-09-25
- 发明人: Do-Hyung Kim , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Gyu-Hwan Oh
- 申请人： Do-Hyung Kim , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Gyu-Hwan Oh
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2007-0027395 20070321
- 主分类号： C23C14/34
- IPC分类号： C23C14/34
摘要：
The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.
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