Invention Application
- Patent Title: GAS ANALYZING APPARATUS AND SUBSTRATE PROCESSING SYSTEM
- Patent Title (中): 气体分析装置和基板处理系统
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Application No.: US12057940Application Date: 2008-03-28
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Publication No.: US20080236747A1Publication Date: 2008-10-02
- Inventor: Tatsuo MATSUDO , Chishio KOSHIMIZU , Tomohiro SUZUKI , Jun Abe
- Applicant: Tatsuo MATSUDO , Chishio KOSHIMIZU , Tomohiro SUZUKI , Jun Abe
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2007-092192 20070330
- Main IPC: G01B11/02
- IPC: G01B11/02 ; G01N25/00 ; H01J49/26 ; C23F1/00

Abstract:
A gas analyzing apparatus includes a measurement chamber having a mounting member for mounting thereon a substrate on which a sample is adsorbed; a depressurizing mechanism for depressurizing the inside of the measurement chamber; and a heating unit for heating the substrate having the adsorbed sample thereon and mounted on the mounting member. The apparatus further includes: a mass spectrometer inserted in the measurement chamber, for detecting gas molecules escaping from the sample with an increasing temperature; and a temperature measuring unit for measuring a temperature of the substrate having the adsorbed sample thereon by using an interferometer which detects an optical thickness of the substrate.
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