发明申请
- 专利标题： SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
- 专利标题（中）： 半导体元件及其生产方法
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申请号： US11866662申请日： 2007-10-03
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公开(公告)号： US20080237701A1公开(公告)日： 2008-10-02
- 发明人: Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
- 申请人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 优先权： DE102006047489.9 20061005
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/425
摘要：
A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
公开/授权文献
- US07973362B2 Semiconductor component and method for producing it 公开/授权日：2011-07-05
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