发明申请
- 专利标题: SEMICONDUCTOR STORAGE DEVICE AND DRIVING METHOD THEREOF
- 专利标题(中): 半导体存储器件及其驱动方法
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申请号: US12060522申请日: 2008-04-01
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公开(公告)号: US20080251830A1公开(公告)日: 2008-10-16
- 发明人: Tomoki Higashi , Takashi Ohsawa , Ryo Fukuda
- 申请人: Tomoki Higashi , Takashi Ohsawa , Ryo Fukuda
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-106069 20070413
- 主分类号: H01L27/102
- IPC分类号: H01L27/102 ; G11C16/04
摘要:
This disclosure concerns a semiconductor storage device comprising a semiconductor layer provided on the insulation layer provided on the semiconductor substrate; a source layer and a drain layer provided in the semiconductor layer; a body provided between the source layer and the drain layer, the body being in an electrically floating state; an emitter layer contacting with the source layer, the emitter layer having an opposite conductive type to the source layer; a word line including the source layer, the drain layer, and the body, the word line being provided to memory cells arrayed in a first direction in a plurality of tow-dimensionally arranged memory cells; a source line connected to the source layers of the memory cells arrayed in the first direction; and a bit line connected to the drain layers of the memory cells arrayed in a second direction intersecting the first direction.
公开/授权文献
- US07893478B2 Semiconductor storage device and driving method thereof 公开/授权日:2011-02-22
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